Electrical &amp; Physical Characterization of Silicon-Organic Asymmetrical Metal Insulator Semiconductor Capacitive Test Structure

Agarwal, R.P.

doi:10.1007/s12633-020-00939-8

Cited by 5 publications

(1 citation statement)

References 48 publications

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“…The simulation parameters employed in this study were drawn from previously published experimental investigations that depict realistic behavior. [ 19,20 ] The dimensions of the channel and the contacts were chosen based on the desired accuracy of the simulation results, and available computational resources. In simulation studies, dimensions are often kept relatively small to allow convergence of the simulation process and reduce computational complexity.…”

Section: Resultsmentioning

confidence: 99%

Threshold Voltage Extraction Using Conductance–Voltage Method for Nano‐Organic/Oxide Thin‐Film Transistors: Comparative Study of P‐ and N‐Type Devices

Pream Krishna,

Agarwal

2024

Physica Status Solidi (a)

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Threshold voltage is an essential component for a transistor to operate properly. In this work, an alternate technique for obtaining the threshold voltage, which is referred to as the conductance–voltage method, is suggested. In this technique, the threshold voltage is estimated by measuring the change in drain current with an applied gate voltage when the device transits from the weak accumulation to the strong accumulation mode of operation. The 2D simulations are then used to apply this strategy to pentacene‐based and amorphous indium‐gallium‐zinc‐oxide‐based thin‐film transistors (TFTs) in their linear region of operation. These seem promising, and the technique offers a useful tool for enhancing the functionality of complementary organic/oxide TFTs in the future.

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Section: Resultsmentioning

confidence: 99%