Electrical Analyses of Germanium MIS Structure and Spectroscopic Measurement of the Interface Trap Density in an Insulator/Germanium Interface at Room Temperature

Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3

“…The accumulation side of the admittance data is analyzed using the standard depletion/accumulation model 9 and the inversion side using an alternative. 10 The circuit model in inversion accounts for the supply of minority carriers through bulk thermal generation and diffusion across the space charge layer along with interface state contribution, which enables accurate modeling of the admittance data in inversion. Figure 1͑b͒ shows C-V characteristics of the ALD Al 2 O 3 / p-GaSb and PEALD Al 2 O 3 / p-GaSb samples with HCl treatment for different temperatures.…”

Bulk and Interface Engineering of GeO2/Ge for High-κ/Germanium Gate Stack

“…As shown in the insets of Fig. 4, the density of interface states near the mid gap of Ge was reduced as low as 2.7 × 10 11 cm -2 eV -1 which estimated by conductance method at room temperature (19). These results prove that interface formation between Ge-GeO 2 at low temperature is effective to reduce the interface states due to a quite slow desorption rate of GeO.…”

Improved Electrical Properties of Ge p-MOSFET With $ \hbox{HfO}_{2}$ Gate Dielectric by Using $\hbox{TaO}_{x} \hbox{N}_{y}$ Interlayer

“…3 shows the frequency dependence of C-V curves measured at frequencies ranging from 1 to 800 kHz, and the interface-state distribution in the bandgap of germanium. The normal conductance method [12] was used to extract D it 's just for the purpose of a relative comparison between the samples, although it has been shown to produce numerically inaccurate results for germanium [13]- [16]. The D it near the midgap for the passivated sample is 5 × 10 11 −1 × 10 12 eV −1 • cm −2 , which is much smaller than that for the nonpassivated sample (3.2 × 10 12 −4.6 × 10 12 eV −1 • cm −2 ).…”