Electrical and dielectric properties of Al/HfO2/p-Si MOS device at high temperatures

Bengi, S.; Bülbül, Metín

doi:10.1016/j.cap.2013.07.004

Cited by 46 publications

(22 citation statements)

References 46 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…3a) of HfO 2 MOS capacitors for 1 MHz were obtained with the aim of the calculating some electrical parameters of asdeposited and annealed devices such as diffusion potential/ built-in voltage (V D ), barrier height (U B ). The linear regions of obtained curves fitted using the linear lines and for the high frequency measurements (C500 kHz), depletion layer capacitance can be given as [10,[24][25][26][27] …”

Section: Pda Effects On Electrical Characteristics Of Mos Capacitorsmentioning

confidence: 99%

“…It has been reported that the SiO 2 film thickness less than 1.2 nm lead to serious leakage current due to the direct tunneling of electrons [3][4][5][6]. During recent years, the studies on the investigation of the electrical properties of the high-k dielectric materials as gate insulator such as ZrO 2 [7], Al 2 O 3 [8], HfO 2 [9,10] have been extensively increased with the aim of designing the high performance. Among the high-k dielectrics, HfO 2 has been reported as the most promising candidate due to their attractive properties such as high dielectric constant [11], large band gap [12], and good thermodynamic stability [4].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Effects of post deposition annealing, interface states and series resistance on electrical characteristics of HfO2 MOS capacitors

Kahraman

Yılmaz

Kaya³

et al. 2015

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

The purposes of this paper are to investigate the post deposition annealing (PDA) effect on structural and electrical characterizations of HfO 2 MOS capacitor and the frequency dependency of series resistance and interface states in this device. PDA processes on the HfO 2 films deposited using RF magnetron sputtering system were performed in N 2 ambient at 350, 550, 650, and 750°C. The phase identifications and crystallization degrees of the HfO 2 films were determined by using X-ray diffractometry. The grain size of the films was varied from 4.5 to 15.23 with increasing in PDA temperature. The HfO 2 MOS capacitors were fabricated using the as-deposited and annealed films for electrical characterization. C-V and G/ x-V measurements were performed at 1 MHz frequency. The C-V characteristics of the MOS capacitor fabricated with film annealed at 550°C show a better behaviour in terms of the high dielectric constant and low effective oxide charge compared to others. For this device, C-V and G/x-V measurements were performed in different frequencies ranging from 10 kHz to 1 MHz at room temperature. Obtained results show that series resistance and interface states strongly influence the C-V and G/x-V behaviour of the MOS capacitor.

show abstract

Section: Pda Effects On Electrical Characteristics Of Mos Capacitorsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effects of post deposition annealing, interface states and series resistance on electrical characteristics of HfO2 MOS capacitors

Kahraman

Yılmaz

Kaya³

et al. 2015

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

show abstract

“…To reduce the leakage current and improve the breakdown voltage in Schottky diodes, it is necessary to achieve a higher Schottky barrier. The development of a thin insulator layer with high-quality for the catalytic metalinsulator-semiconductor in MOS Schottky diode has become a key issue [6][7][8][9][10]. For forming the Schottky contact, the high work-function metals (Au, Pt, Ni, W, Pd, Ru, Ir, etc.)…”

Section: Introductionmentioning

confidence: 99%

“…For forming the Schottky contact, the high work-function metals (Au, Pt, Ni, W, Pd, Ru, Ir, etc.) have been widely used in MS and MOS diodes [2][3][4][5][7][8][9][10]. Several groups have put many efforts to explore MOS Schottky diodes with different methods.…”

Section: Introductionmentioning

confidence: 99%

“…Their SBH of the MOS diode decreased from 0.98 eV to 0.75 eV upon exposing to a reduction condition. Electrical and dielectric properties of Al/HfO 2 /p-Si MOS device were studied with the C-V measurement and the SBHs were 0.17-0.98 eV in the temperature range of 300-400 K [7]. Baris reported all the parameters of Au/Tin oxide/n-Si(100) MOS diodes [11].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Characteristics of RF reactive sputter-deposited Pt/SiO2/n-InGaN MOS Schottky diodes

Tuan

Kuo

2015

Materials Science in Semiconductor Processing

View full text Add to dashboard Cite

Dielectric Dispersion and High Field Response of Multilayer Hexagonal Boron Nitride

Ahmed

Heo

Yang

et al. 2018

Adv Funct Materials

View full text Add to dashboard Cite

The dielectric dispersion of a material holds significant importance for the understanding of basic material characteristics and the design parameters of a functional device. Here, the dielectric dispersion characteristics of multilayer hexagonal boron nitride (hBN) using time domain reflectometry under an extended device operating frequency range up to 100 MHz are studied. Contrary to what is previously reported, the capacitance, hence the effective dielectric constant, of hBN decreases with the increase of frequency above the MHz range, indicating heat dissipation in lossy hBN dielectric. Furthermore, hBN shows stubborn dielectric characteristics with temperature changes that confirm its thermal stability in extreme operating conditions. The charge carriers in hBN are transported by Fowler-Nordhiem tunneling with increasing the electrical field. Lastly, hBN endures electrical field of 7.8 MV cm −1 that implies its potential use as a promising dielectric material. These results will benefit the research and development of hBN supported high-speed electronics operated at high-frequency conditions for energyefficient device applications.

show abstract

Electrical and dielectric properties of Al/HfO2/p-Si MOS device at high temperatures

Cited by 46 publications

References 46 publications

Effects of post deposition annealing, interface states and series resistance on electrical characteristics of HfO2 MOS capacitors

Effects of post deposition annealing, interface states and series resistance on electrical characteristics of HfO2 MOS capacitors

Characteristics of RF reactive sputter-deposited Pt/SiO2/n-InGaN MOS Schottky diodes

Dielectric Dispersion and High Field Response of Multilayer Hexagonal Boron Nitride

Contact Info

Product

Resources

About