Electrical and dielectrical properties of the MnO2 doped with As2O3 and SnO

Kayan, Asgar; Tarcan, Erdoğan; Kadiroglu, Ümüt; Esmer, Kadir

doi:10.1016/j.matlet.2004.01.018

Cited by 18 publications

(5 citation statements)

References 20 publications

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“…Interestingly, the current n ‐value is higher than the n ‐value of the low‐frequency arc, which is higher than 0.9, implying that the electrical source can be approximated as a single electrical source. Based on a capacitance of 2.3 × 10 −9 F at 1 kHz, the effective dielectric constant was calculated to be approximately 4,683, indicating that the relevant source is associated with the electrical barrier because the effective dielectric constant is much higher than that of the MnO 2 bulk, i.e., close to 50 …”

Section: Resultsmentioning

confidence: 99%

“…Based on a capacitance of 2.3 9 10 À9 F at 1 kHz, the effective dielectric constant was calculated to be approximately 4,683, indicating that the relevant source is associated with the electrical barrier because the effective dielectric constant is much higher than that of the MnO 2 bulk, i.e., close to 50. 25 In addition, the bias-dependent impedance characteristics of the two electrode structures are quite dissimilar in that the resistance decreased gradually in the Pt/MnO x /Pt thin film while the Ta/MnO x /Pt thin film exhibited two distinct regimes; at the initial voltage bias (i.e., 1-2 V), there was a significant decrease in resistance, by nearly one order of magnitude (equivalently, 20 times) per volt, and a higher voltage bias induced a gradual decrease in resistance similar to that observed for the Pt/MnO x /Pt film. Similarly, in the Ta/MnO x /Pt thin film, the capacitance at 1 kHz decreased in a highly sensitive manner at an applied bias of up to 3 V, by nearly one order of magnitude in capacitance per volt.…”

Section: Resultsmentioning

confidence: 99%

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Impedance Spectroscopy Characterization in Bipolar Ta/MnO_x/Pt Resistive Switching Thin Films

et al. 2013

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Impedance spectroscopy was applied to MnOx‐based thin films prepared in symmetric and asymmetric electrode configurations, i.e., Pt/MnOx/Pt and Ta/MnOx/Pt, respectively. Equivalent circuit analysis suggests the presence of higher resistance surface layers adjacent the electrodes, in addition to a higher conductivity component at central portions of the MnOx thin films. The asymmetric configuration enables the Ta/MnOx interfacial layer to facilitate the redox transport of oxygen ions, where significant changes in resistance with the electric field are responsible for the higher on/off resistance ratio in Ta/MnOx/Pt. The higher dielectric constant and bias‐dependent capacitance and resistance support the coexistence of both oxidized surfaces and interfacial layers.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Impedance Spectroscopy Characterization in Bipolar Ta/MnO_x/Pt Resistive Switching Thin Films

et al. 2013

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“…The precursors of SCM-100 possess a conductivity of 4.0 Â 10 À4 S cm À1 , which is around one order of magnitude larger than those of the single oxidation state MnO x (e.g. 10 À5 -10 À6 S cm À1 ) 39 and pure Co 3 O 4 . This conductivity improvement in the precursors may represent the effect of multi-cation (or impurity doping) solely, without involving a multiple mixed-valence effect.…”

Section: Conductivity Improvement and Multiple Mixed-valence Systemsmentioning

confidence: 94%

Redox preparation of mixed-valence cobalt manganese oxide nanostructured materials: highly efficient noble metal-free electrocatalysts for sensing hydrogen peroxide

2014

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High-performance hydrogen peroxide sensors provide valuable signals of biological interactions, disorders, and developing of diseases. Low-cost metal oxides are promising alternatives but suffer from low conductivity and sensing activity. Multi-component metal oxides are excellent candidates to accomplish these challenges, but the composition inhomogeneity is difficult to manage with conventional material preparation. We demonstrated redox preparation strategies to successfully synthesize highly homogeneous, noble metal-free H2O2 sensors of spinel nanostructured cobalt manganese oxides with enhanced conductivity, multiple mixed-valence features, and efficient H2O2 sensing activities. The designed redox reactions accompanied with material nucleation/formation are the key factors for compositional homogeneity. High conductivity (1.5 × 10(-2) S cm(-1)) and H2O2 sensing activity (12 times higher than commercial Co3O4) were achieved due to the homogeneous multiple mixed-valence systems of Co(ii)/(iii) and Mn(iii)/(iv). A wide linear detection range (from 0.1 to 25 mM) with a detection limit of 15 μM was observed. Manganese species assist the formation of large surface area nanostructures, enhancing the H2O2 reduction activities, and inhibit the sensing interference. The material controls of hierarchical nanostructures, elemental compositions, porosity, and electrochemical performances are highly associated with the reaction temperatures. The temperature-dependent properties and nanostructure formation mechanisms based on a reaction rate competition are proposed.

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“…19 The mentioned peaks were all found in the FTIR spectrum of the resulting M1 composite fibers. It confirms the formation of MnO 2 /PEO composite fibers.…”

mentioning

confidence: 89%

Preparation of manganese oxide–polyethylene oxide hybrid nanofibers through in situ electrospinning

Madani

Sharifi-Sanjani

Khoee

et al. 2010

J of Applied Polymer Sci

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Manganese oxide nanoparticles-polyethylene oxide nanofibers as organic-inorganic hybrid were prepared via in situ electrospinning. Thus, electrospinning of polyethylene oxide solution with different manganese chloride concentration was carried out in gaseous ammonia atmosphere containing oxygen. The reaction of manganese chloride with ammonia produces manganese hydroxide, and then oxygen in the reaction media reacts with manganese hydroxide to yield manganese oxide. These two reactions occur during fiber formation. Transmission electron microscopy and scanning electron microscopy showed that manganese oxide (MnO 2 ) nanoparticles were formed on the produced nanofibers of 100-600 nm in diameter. The existence of the formed MnO 2 was also proved by X-ray diffraction analysis, and it showed that the k-MnO 2 nanoparticles were produced. Differential scanning calorimetry (DSC) analysis was used to determine the melting point and to calculate the crystallinity of the produced hybrid nanofibers. The DSC and thermogravimetric analysis results of the obtained nanofibers were compared with those of the nanofibers produced in electrospinning of pure polyethylene oxide solution.

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Electrical and dielectrical properties of the MnO2 doped with As2O3 and SnO

Cited by 18 publications

References 20 publications

Impedance Spectroscopy Characterization in Bipolar Ta/MnO_x/Pt Resistive Switching Thin Films

Impedance Spectroscopy Characterization in Bipolar Ta/MnO_x/Pt Resistive Switching Thin Films

Redox preparation of mixed-valence cobalt manganese oxide nanostructured materials: highly efficient noble metal-free electrocatalysts for sensing hydrogen peroxide

Preparation of manganese oxide–polyethylene oxide hybrid nanofibers through in situ electrospinning

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Electrical and dielectrical properties of the MnO2 doped with As2O3 and SnO

Cited by 18 publications

References 20 publications

Impedance Spectroscopy Characterization in Bipolar Ta/MnOx/Pt Resistive Switching Thin Films

Impedance Spectroscopy Characterization in Bipolar Ta/MnOx/Pt Resistive Switching Thin Films

Redox preparation of mixed-valence cobalt manganese oxide nanostructured materials: highly efficient noble metal-free electrocatalysts for sensing hydrogen peroxide

Preparation of manganese oxide–polyethylene oxide hybrid nanofibers through in situ electrospinning

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Impedance Spectroscopy Characterization in Bipolar Ta/MnO_x/Pt Resistive Switching Thin Films

Impedance Spectroscopy Characterization in Bipolar Ta/MnO_x/Pt Resistive Switching Thin Films