Electrical and Optical Characterization of Electron Beam Evaporated Indium Antimonide Thin Films

Rahul, .; Verma, Aneet Kumar; Tripathi, R. S. N.; Vishwakarma, S. R.

doi:10.1007/s40009-012-0060-8

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Cited by 4 publications

(2 citation statements)

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“…Another way to form InSb films is the three-temperature method (Gulyaev and Shitnikov, 2015). In addition, InSb films are formed by electron beam evaporation (Ivanov and Smirnov, 2015;Rahul et al, 2011).…”

Section: Introductionmentioning

confidence: 99%

STUDY OF TEMPERATURE COEFFICIENT OF RESISTANCE OF n-InSb FILMS ON i-GaAs (100) SUBSTRATE AND TEMPERATURE SENSORS BASED ON THEM

Kolesnikova

Углов

Drapezo³

et al. 2022

High Temp Mat Proc

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Section: Introductionmentioning

confidence: 99%

STUDY OF TEMPERATURE COEFFICIENT OF RESISTANCE OF n-InSb FILMS ON i-GaAs (100) SUBSTRATE AND TEMPERATURE SENSORS BASED ON THEM

Kolesnikova

Углов

Drapezo³

et al. 2022

High Temp Mat Proc

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“…Electron beam evaporation (EBPVD) is also used to produce InSb films. The EBPVD-deposition of InSb films on glass substrate at temperature of 30 -100 °C with a thickness of 300 -400 nm and its structural state and electrical properties is discussed in (Rahul et al, 2011). In particular, on the base of X-ray diffraction (XRD) studies the authors found that the resulting films have a polycrystalline structure and are oriented along the planes ( 111) and (220).…”

Section: Introductionmentioning

confidence: 99%

EFFECT OF EXPLOSIVE THERMAL EVAPORATION CONDITIONS ON THE PHASE COMPOSITION, CRYSTALLITE ORIENTATION, ELECTRICAL AND MAGNETIC PROPERTIES OF HETEROEPITAXIAL InSb FILMS ON SEMI-INSULATING GaAs (100)

Углов

Drapezo²,

Kuleshov

et al. 2021

High Temp Mat Proc

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In present work the explosive thermal evaporation was used to form heteroepitaxial InSb films on GaAs (100) substrates. The investigation results of phase composition, orientation of crystallites, electrical and magnetic properties are presented. It is shown that heteroepitaxial InSb films form in the deposition temperature range of 375 -410 °C. At lower deposition temperatures, InSb films have a polycrystalline structure. The obtained heteroepitaxial InSb films have high values of the Hall potential (more than 0.5 -0.6 V), the values of the Hall mobility of the charge carriers are in the range of (16 -19) ×10 3 cm 2 / (V×s).

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Interband electrooptical transitions in InSb quantum well

Harutyunyan

Gasparyan

2013

Physica E: Low-dimensional Systems and Nanostructures

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Electrical and Optical Characterization of Electron Beam Evaporated Indium Antimonide Thin Films

Cited by 4 publications

References 10 publications

STUDY OF TEMPERATURE COEFFICIENT OF RESISTANCE OF n-InSb FILMS ON i-GaAs (100) SUBSTRATE AND TEMPERATURE SENSORS BASED ON THEM

STUDY OF TEMPERATURE COEFFICIENT OF RESISTANCE OF n-InSb FILMS ON i-GaAs (100) SUBSTRATE AND TEMPERATURE SENSORS BASED ON THEM

EFFECT OF EXPLOSIVE THERMAL EVAPORATION CONDITIONS ON THE PHASE COMPOSITION, CRYSTALLITE ORIENTATION, ELECTRICAL AND MAGNETIC PROPERTIES OF HETEROEPITAXIAL InSb FILMS ON SEMI-INSULATING GaAs (100)

Interband electrooptical transitions in InSb quantum well

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