2009
DOI: 10.1016/j.tsf.2008.11.114
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Electrical and optical properties of Al-doped ZnO films deposited by hollow cathode gas flow sputtering

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Cited by 28 publications
(13 citation statements)
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“…The conductivity, if properly doped with Ga, Al, In, etc., could approach the high level of commercially used indium-tinoxide (ITO) [1][2][3]. Recently, one of the renewed interests is fueled by the observation of ferromagnetism in transition-metal-doped ZnO, which is also known as diluted magnetic semiconductor (DMS) [4,5].…”
Section: Introductionmentioning
confidence: 99%
“…The conductivity, if properly doped with Ga, Al, In, etc., could approach the high level of commercially used indium-tinoxide (ITO) [1][2][3]. Recently, one of the renewed interests is fueled by the observation of ferromagnetism in transition-metal-doped ZnO, which is also known as diluted magnetic semiconductor (DMS) [4,5].…”
Section: Introductionmentioning
confidence: 99%
“…The decrease in transmittance in the near infrared region is observed with the increasing carrier density. This behavior is caused by the increasing plasma oscillation frequency with the increasing carrier density, which could be explained quantitatively by the Drude theory and is well known in degenerated TCO films [13,14]. From the Drude-Lorentz free electron model, the plasmon frequency (ωω p ) can be expressed as the following equation:…”
Section: Resultsmentioning
confidence: 85%
“…In the short wavelength region, the transmittance was affected by the absorption of light by interband electronic transitions [12]. Therefore, the transmittance in degenerated TCO films [13,14]. From the Drude-Lorentz free electron model, the plasmon frequency (ω p ) can be expressed as the following equation: (1) hereHere, m is the effective mass of the electron, e is the electric charge, n is the carrier density of electrons, and ε 0 is the permittivity of free space [15,16].…”
Section: Resultsmentioning
confidence: 99%
“…At around 800 nm, this behavior is caused by the reflection of light due to the thin films had multilayer, AZO and Ag layer. At near-infrared region, the decrease in transmittance corresponds to the increasing of free electron concentration according to the Drude theory [15,16]. Typically, Aldoped ZnO thin films which have been reported [15] had transmittance value almost zero in near-infrared region indicating high free electron concentration.…”
Section: Resultsmentioning
confidence: 93%
“…At near-infrared region, the decrease in transmittance corresponds to the increasing of free electron concentration according to the Drude theory [15,16]. Typically, Aldoped ZnO thin films which have been reported [15] had transmittance value almost zero in near-infrared region indicating high free electron concentration. In our samples, the transmittance of thin films with Ag thickness of 8 nm has high transmittance value in near-infrared region.…”
Section: Resultsmentioning
confidence: 93%