Electrical and optical properties of ZnO: Al films prepared by an evaporation method

Ma, Jin; Feng, Ji; Ma, Hongjuan; Li, Shuying

doi:10.1016/0040-6090(95)08173-9

Cited by 95 publications

(49 citation statements)

References 13 publications

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“…It can also be used as piezo electric devices and gas sensors (Kang and Joung 2007;Ferro 2009). Different methods have been employed to prepare the ZnO thin films, such as sputtering (Mahmood et al 1995;Liu et al 2007), thermal evaporation (Ma et al 1996), sol-gel method (Tsay et al 2010), electron beam evaporation method (Varnamkhasti et al 2012), pulsed laser evaporation (Zhao et al 2006), and spray pyrolysis technique (Lokhande et al 2002;Alver et al 2007;Sahay and Nath 2008).…”

Section: Introductionmentioning

confidence: 99%

Effect of annealing on the properties of zinc oxide nanofiber thin films grown by spray pyrolysis technique

2013

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Zinc oxide nanofiber thin films have been deposited on glass substrate by spray pyrolysis technique. The X-ray diffraction studies revealed that the films are polycrystalline with the hexagonal structure and a preferred orientation along (002) direction for films annealed for 1 h at 450°C. Further increase in annealing time changes the preferred orientation to (100) direction. The scanning electron microscopic analysis showed the formation of ZnO nanofiber with an average diameter of approximately 800 nm for annealed films. The compositional analysis of nanofiber ZnO thin films were studied by time of flight secondary ion mass spectroscopy, which indicated oxygen deficiency in the films. The optical properties of annealed films have shown a variation in the band gap between 3.29 and 3.20 eV. The electrical conductivity of the as grown and annealed films showed an increase in the conductivity by two orders of magnitude with increase in annealing duration.

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Section: Introductionmentioning

confidence: 99%

Effect of annealing on the properties of zinc oxide nanofiber thin films grown by spray pyrolysis technique

2013

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“…Therefore, this indicates an improved crystallinity and, for the same preparation conditions, the crystallite size of the ZnO: Al is bigger than that of ZnO (Ma et al, 1996). The FWHM of the peak (002) was used to estimate the average size of crystallite along the c-axis by the Scherrer equ-ation.…”

Section: Resultsmentioning

confidence: 99%

Optical and Structure Analysis of ZnO:Al Film

Trindade¹,

Chaves²,

Bortoleto³

et al. 2017

American Journal of Engineering and Applied Sciences

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ZnO and ZnO:Al are wide-bandgap semiconductors which have many applications, mainly as transparent conducting films. Thin films of these compounds were deposited onto glass and silicon substrates by RF magnetron sputtering for the investigation of structural and optical characteristics. The XRD results show that the films present wurtzite structure. The formation of a polycrystalline film having a preferential crystallographic orientation in the plane (002) is observed in the doped samples. The Al incorporated films exhibited optical transmittance above 80% in the visible spectrum and a clear absorption band in the infrared due to free carriers. Additionally, the optical band gap around 3.48 eV is significantly above the values for the intrinsic ZnO (3.25 eV). Photoluminescence (PL) measurements showed a broad emission band in the visible region. In addition, PL emission lines at 3.32 and 3.37 eV showed up in Al incorporated films, and were related to excitonic emissions. The results show that the Burstein-Moss effect plays a central role in determining the optical characteristics of the doped material.

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“…The ZnO thin films are fabricated by several methods ranging from vacuum evaporation, pulsed laser deposition, chemical vapor deposition, sol-gel processing, magnetron sputtering, molecular beam epitaxy, spray pyrolysis, chemical spray and plasma enhanced chemical vapor deposition [14][15][16][17][18][19][20][21][22]. DC magnetron sputtering has some advantages such as; simple setup, high deposition rate and easy control of deposition parameters.…”

Section: Introductionmentioning

confidence: 99%

Effect of O2/Ar Mixture on the Structural and Optical Properties of ZnO Thin Films Fabricated by DC Cylindrical Magnetron Sputtering

2011

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Direct Current Cylindrical Magnetron Sputtering Setup was used to deposit ZnO thin films on BK7 substrates. The effects of changing O 2 /Ar reactive gas mixtures on the structural and optical properties of films were studied. Crystallinity and structure of films were obtained by X-ray diffraction (XRD). Preferential crystalline growth orientation of ZnO films detected by XRD was always along the (002) orientation. The thickness of films was measured by surface profilometer which showed thickness increasing from 68.7 to 80.8 nm for 3-6% O 2 amount respectively. The morphology and roughness of the films were investigated by Atomic Force Microscopy (AFM). As oxygen gas amount was increased, the roughness and the grain size were decreased and the deposition rate was increased. The optical transmittance of ZnO films are obviously affected by the changing of O 2 /Ar reactive gas mixtures. All films exhibit a transmittance higher than 70% in the visible region. The optical band gap of films was measured by Tauc's method. The results show that by increasing the amount of O 2 in reactive gas mixture, the optical band gap of deposited films increases.

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Electrical and optical properties of ZnO: Al films prepared by an evaporation method

Cited by 95 publications

References 13 publications

Effect of annealing on the properties of zinc oxide nanofiber thin films grown by spray pyrolysis technique

Effect of annealing on the properties of zinc oxide nanofiber thin films grown by spray pyrolysis technique

Optical and Structure Analysis of ZnO:Al Film

Effect of O2/Ar Mixture on the Structural and Optical Properties of ZnO Thin Films Fabricated by DC Cylindrical Magnetron Sputtering

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