Electrical and optical properties of InSbSe3 amorphous thin films

Afifi, M. A.; El-Wahabb, E. Abd; Bekheet, A.E.; Atyia, H.E.

doi:10.1007/s10853-006-0868-z

Cited by 7 publications

(3 citation statements)

References 32 publications

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“…l 0 and S 0 for the studied compositions, which are listed in table 3. The calculated e ¥ values almost agree with e ¥ WD and e L which are attributed to the lattice vibration and localized charge carriers in the vacant lattice [2,51].…”

Section: High Frequency Dielectric Constant (E ¥ )supporting

confidence: 61%

Impact of Se and Te addition on optical characteristics of ternary GeInSb chalcogenide films as promising materials for optoelectronic applications

El-Metwally¹,

Atyia²,

Ismail³

2022

Phys. Scr.

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The present study investigates the linear and non-linear optical characteristics of non-crystalline quaternary Ge15In5Sb5Se75 (GIS-Se) and Ge15In5Sb5Te75 (GIS-Te) chalcogenide thin films. The values of transformation temperatures determined by differential thermal analysis (DTA), such as glass transition T_g and crystallization T_c temperatures, are 524.3 and 639.6 K for GIS-Se and 503.6 and 542.0 K for GIS-Te. The calculated values of glass forming ability (GFA) and thermal stability (H) for GIS-Se are higher than those for GIS-Te. The transmittance T(λ) and reflectance R(λ) spectrophotometric measurements in the UV-vis. wavelength range (400 - 2500 nm) are used to estimate the index of refraction n and extinction coefficient k. Tauc’s extrapolation model was used to determine both Urbach tail (E_U) and optical band gap (E_g^opt) energies. The values of (E_U) are 0.416, 0.526 eV and (E_g^opt) are 1.83, 1.31 eV with indirect allowed transitions for GIS-Se and GIS-Te, respectively. The optical conductivity σ_opt increased as photon energy (hν) increased, and it was enhanced in the presence of Te than Se addition. The analysis of the index of refraction (n) is used to evaluate the dispersion energy E_d, the high frequency dielectric constant ε_∞, the oscillator strength S_0, the lattice dielectric constant ε_L, the ratio N⁄m^* and the optical electronegativity ∅_opt, which were found to be higher in GIS-Te than those in GIS-Se composition. The volume (VELF) and surface (SELF) energy loss functions were found to be increased with increasing (hν) and the presence of Te. Furthermore, the calculated values of nonlinear optical susceptibility χ^((3)) and nonlinear index of refraction n_2 for GIS-Se and GIS-Te are 0.195  10-12, 2.44  10-11 esu and 0.868  10-12, 10.19  10-11 esu, respectively. The detailed outcomes show that the studied film samples are suitable for various optical applications.

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Section: High Frequency Dielectric Constant (E ¥ )supporting

confidence: 61%

Impact of Se and Te addition on optical characteristics of ternary GeInSb chalcogenide films as promising materials for optoelectronic applications

El-Metwally¹,

Atyia²,

Ismail³

2022

Phys. Scr.

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“…[1][2][3][4][5][6]. Se based chalcogenide alloys have emerged as a promising material due to their large potential applications in holography, e-beam recording and digital X-ray imaging [7,8]. The reported physical characteristics have been improved by alloying Se with other elements.…”

Section: Introductionmentioning

confidence: 99%

Spectroscopic investigations of polycrystalline In_xSb_20−xAg₁₀Se₇₀ (0 ⩽ × ⩽ 15) multicomponent chalcogenides

Sharma

Kumar

et al. 2016

Materials Science-Poland

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The composition dependence of physical properties of chalcogenides has recently been studied for their phase change properties and energy conversion. In the present work, we report the structure, composition, optical and Raman spectroscopy results for bulk polycrystalline In x Sb 20 − x Ag 10 Se 70 (0 x 15) samples. The phase quantification and composition have been studied by using XRD and EDX techniques. The alloy composition up to 5 at.% of indium resulted in crystallization of AgSbSe 2 , while further increase in In content favored the formation of another chalcopyrite AgInSe 2 phase yielding the solid solutions for this alloy system. A decrease in band gap up to x = 5 followed by its increase with an increase in indium concentration has been observed. The variations in shape and position of characteristic Raman bands has been used for understanding the structural modifications of the network with the variation in indium content.

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“…Amorphous selenium has been emerged as promising material because of its potential technological importance. It is widely preferred in the fabrication of electrophotographic devices and, more recently, switching and memory devices [1,2] have found selenium-based materials to offer attractive advantages. The use of chalcogenide films for reversible optical recording by the amorphous-tocrystalline phase change has recently been reported [3].…”

mentioning

confidence: 99%

Structure and optical properties in the amorphous to crystalline transition in AgSbSe₂ thin films

Hamam

El-Gendy

Selim

et al. 2010

Phys. Status Solidi (c)

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Nearly stoichiometric thin films of the ternary AgSbSe2 compound have been deposited at room temperature by conventional thermal evaporation of the presynthesized material onto glass substrate. The X‐ray and electron diffraction studies revealed that the as‐deposited films are amorphous in nature, while an amorphous‐to‐crystalline phase transition could be obtained by thermal annealing at 373 K. The elemental chemical composition of as‐deposited films was confirmed using the energy dispersive X‐ray analysis. The transmission and reflection spectra of as‐deposited and annealed films at annealing different temperatures were recorded at normal light incidence in the wavelength range 600‐2500 nm. The refractive index and optical band gap have been calculated for the investigated films. The dispersion parameters, (Eo, Ed) static refractive index ns (0), static dielectric constant, ϵs and the carrier concentration to the effective mass ratio, N/m* have been calculated. An analysis of the optical absorption spectra revealed a non direct optical transition characterizing the as‐deposited films and those annealed at 343 and 374 K while; direct and indirect optical transitions characterized the films annealed at 398 K. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Electrical and optical properties of InSbSe3 amorphous thin films

Cited by 7 publications

References 32 publications

Impact of Se and Te addition on optical characteristics of ternary GeInSb chalcogenide films as promising materials for optoelectronic applications

Impact of Se and Te addition on optical characteristics of ternary GeInSb chalcogenide films as promising materials for optoelectronic applications

Spectroscopic investigations of polycrystalline In_xSb_20−xAg₁₀Se₇₀ (0 ⩽ × ⩽ 15) multicomponent chalcogenides

Structure and optical properties in the amorphous to crystalline transition in AgSbSe₂ thin films

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Electrical and optical properties of InSbSe3 amorphous thin films

Cited by 7 publications

References 32 publications

Impact of Se and Te addition on optical characteristics of ternary GeInSb chalcogenide films as promising materials for optoelectronic applications

Impact of Se and Te addition on optical characteristics of ternary GeInSb chalcogenide films as promising materials for optoelectronic applications

Spectroscopic investigations of polycrystalline InxSb20−xAg10Se70 (0 ⩽ × ⩽ 15) multicomponent chalcogenides

Structure and optical properties in the amorphous to crystalline transition in AgSbSe2 thin films

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Spectroscopic investigations of polycrystalline In_xSb_20−xAg₁₀Se₇₀ (0 ⩽ × ⩽ 15) multicomponent chalcogenides

Structure and optical properties in the amorphous to crystalline transition in AgSbSe₂ thin films