Electrical and optical properties of ZnO transparent conducting films by the sol–gel method

Lee, Jin–Hong; Ko, Kyung-Hee; Park, Byung-Ok

doi:10.1016/s0022-0248(02)01907-3

Cited by 612 publications

(244 citation statements)

References 12 publications

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“…The appropriate annealing temperature to achieve the smallest resistivity was 400 ºC, which may have relationship with a high amount of oxygen vacancies. Thus, the favorable oriented growth along (002) plane of ZnO films prepared at T anneal = 600 ºC is not related with low resistivity as suggested in the literature 15,19,29 . The film porosity might adversely influence the light and conductivity phenomena to hinder the positive effect of (002) preferential orientation in ZnO films.…”

Section: Resultsmentioning

confidence: 66%

“…Transparent and conductive (002)-oriented ZnO films have been prepared by sol-gel spin-coating, however, the use of single crystal substrates and doping elements have been required [15][16][17] . In addition, undoped and (002)-oriented ZnO films grown on amorphous substrates by sol-gel have also been reported to show relatively attractive electrical and optical properties 18,19 . In this study, it is shown that the (002)-orientation is not the significant feature to achieve low resistivity in ZnO films prepared by sol-gel spin-coating on amorphous substrates.…”

Section: Introductionmentioning

confidence: 99%

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Optical and Electrical Properties of (002)-Oriented ZnO Films Prepared on Amorphous Substrates by Sol-Gel Spin-Coating

et al. 2016

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Zinc oxide (ZnO) films were prepared on amorphous quartz substrates by sol-gel spin-coating using Zn(CH 3 COO) 2 •2H 2 O precursor. Isopropanol, ethanol and 2-methoxyethanol were used as solvents. The film drying temperature was kept constant at 200 ºC and the annealing temperature was varied from 400 to 800 ºC. Highly transparent and (002)-oriented hexagonal wurtzite-type ZnO films were obtained using isopropanol solvent. The ZnO films prepared at T anneal = 600 ºC showed the highest (002) preferential orientation, however it was not the significant feature to achieve low resistivity. The uniform and (002)-oriented ZnO films prepared at T anneal = 400 ºC display the highest transmittance (>93% in the visible region) and the lowest resistivity (7.1 Ω•cm).

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Section: Resultsmentioning

confidence: 66%

Section: Introductionmentioning

confidence: 99%

Optical and Electrical Properties of (002)-Oriented ZnO Films Prepared on Amorphous Substrates by Sol-Gel Spin-Coating

et al. 2016

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“…Many techniques have been utilized to prepare ZnO thin films, such as metal organic chemical vapor deposition, pulsed laser deposition, sputtering, hydrothermal, sol-gel method, etc. [8][9][10][11][12][13][14][15][16][17][18]. Due to the low cost and simple equipment, sol-gel method has been extensively applied to prepare ZnO thin films.…”

Section: Introductionmentioning

confidence: 99%

(0 0 2)-oriented growth and morphologies of ZnO thin films prepared by sol-gel method

Guo

et al. 2016

Materials Science-Poland

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Zinc acetate was used as a starting material to prepare Zn-solutions from solvents and ligands with different boiling temperature. The ZnO thin films were prepared on Si(1 0 0) substrates by spin-coating method. The effect of baking temperature and boiling temperature of the solvents and ligands on their morphologies and orientation was investigated. The solvents and ligands with high boiling temperature were favorable for relaxation of mechanical stress to form the smooth ZnO thin films. As the solvents and ligands with low boiling temperature were used to prepare Zn-solutions, the prepared ZnO thin films showed (0 0 2) preferred orientation. As n-propanol, 2-methoxyethanol, 2-(methylamino)ethanol and monoethanolamine were used to prepare Zn-solutions, highly (0 0 2)-oriented ZnO thin films were formed by adjusting the baking temperature.

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“…The resistivity of the films was sharply decreased after thermal treatments. This was an expected result mainly due to the increase of grain size and of structural homogeneity and to the reduction of scattering of carriers at the grain boundaries with annealing temperature but can also be connected to the decrease of excess oxygen and/or to the increase of oxygen vacancies (which in turn leads to an increase of the carrier concentration) [28,29]. Additionally, the dopants depletion from the SnO 2 lattice and subsequent clusterization at the grain boundaries can also contribute for decreasing the resistivity of the film since the ionic metals can act as trapping centers.…”

Section: Electrical Propertiesmentioning

confidence: 95%

Nanocrystalline Au:Ag:SnO2 films prepared by pulsed magnetron sputtering

Reddy

Figueiredo

Cavaleiro

2013

Journal of Physics and Chemistry of Solids

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show abstract

Electrical and optical properties of ZnO transparent conducting films by the sol–gel method

Cited by 612 publications

References 12 publications

Optical and Electrical Properties of (002)-Oriented ZnO Films Prepared on Amorphous Substrates by Sol-Gel Spin-Coating

Optical and Electrical Properties of (002)-Oriented ZnO Films Prepared on Amorphous Substrates by Sol-Gel Spin-Coating

(0 0 2)-oriented growth and morphologies of ZnO thin films prepared by sol-gel method

Nanocrystalline Au:Ag:SnO2 films prepared by pulsed magnetron sputtering

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