Electrical And Optical Properties Of Polycrystalline CdO Thin Films

Rusu, G.I.; Rusu, R. S.

doi:10.1080/14328917.2005.11784904

Cited by 20 publications

(23 citation statements)

References 28 publications

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“…The conductivity increase from5.69 X10 -5 to0.0001,0.0011(Ω.cm) -1 with increasing the annealing temperature and thickness respectively.The irreversible temperature dependence of the electrical conductivity for respective films is supposed to be due to the changes in film structure during the annealing process.The annealing films contain a large a mount of free Te atoms not bonded in the CdTe lattice.These free Te atoms trap electrons on their available chemical bond and create acceptor states. In this way, the charge carrier density in these films is greater in comparison with that of the stoichiometric sample.Consequently, the electrical conductivity of the respective films will be greater, fact that explains the greater value obtained for their σ [16]. This result coincides with the results of Al-Dhafiri [2] how found that the increase σ with annealing temperature due to increase the excess Te atoms which are usually not bonded in the CdTe lattice.…”

Section: -1 DC Conductivitysupporting

confidence: 89%

Study the effect of thickness and annealing temperature on the Electrical Properties of CdTe thin Films

Journal¹

2008

Baghdad Sci.J

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The electrical properties of polycrystalline cadmium telluride thin films of different thickness (200,300,400)nm deposited by thermal evaporation onto glass substrates at room temperature and treated at different annealing temperature (373, 423, 473) K are reported. Conductivity measurements have been showed that the conductivity increases from 5.69X10-5 to 0.0011, 0.0001 (?.cm)-1 when the film thickness and annealing temperature increase respectively. This increasing in ?d.c due to increasing the carrier concentration which result from the excess free Te in these films.

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Section: -1 DC Conductivitysupporting

confidence: 89%

Study the effect of thickness and annealing temperature on the Electrical Properties of CdTe thin Films

Journal¹

2008

Baghdad Sci.J

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“…)…………………………... (7) Whereσ° is the minimum electrical conductivity at 0K, T is the temperature, is the Boltzmann's constant and Ea is the activations energies which correspond to (Eg/2) for intrinsics conductions, [17]. …”

Section: P-issn: 2222-8373 E-issn: 2518-9255mentioning

confidence: 99%

Study of physical properties of CdO Thin film prepared by Chemical spray pyrolysis Technique

Al-Ansari¹,

Khaleel²,

Awadh³

et al. 2017

djps

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“…Hence, accurate characterizations of electrical and optical properties are essential in thin films applications. Various researches have characterized Tellurium films prepared by evaporation method [14][15]. Chemical spray deposition is a low cost and convenient method has recently been utilized to prepare thin polycrystalline films of a wide variety of compound semiconductors by a number of investigators among them [16][ Recently, Tellurium thin film has been prepared by chemical spray-pyrolysis [17].…”

Section: Introductionmentioning

confidence: 99%

Influence of Thickness on Electrical and Optical Properties of Tellurium Thin Films Deposited by Chemical Spray Pyrolysis

Saadie¹

2015

Int J App Math Elt Comp

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Abstract:In this paper, Spray pyrolysis was applied to deposit Tellurium thin film on glass substrates at 498 ± 283 K in order to investigate the influence of thickness on the electrical and optical properties of the prepared thin films. The film thicknesses were measured in situ by weighting method. The thicknesses were from (150 to 800) nm. X-ray diffraction results showed that the Te thin films formed were polycrystalline with hexagonal structure. The effect of film thickness on the electrical properties of the films was investigated by Hall Effect measurement through the analysis of the I-V plots. The conductivity of the films and carrier concentration were highly increased when the films became thicker. Transmission and absorption spectrum of the prepared thin film had been recorded using UV-VIS-NIR spectrophotometer in the photon wavelength range of 300 -2000 nm. The values of some important optical parameters of the studied films (absorption coefficient, and optical band gap energy) were determined using these spectra. The transmittance showed better results when thicknesses were being increased. In addition, the absorption coefficient is higher for thinner films and decreases for thicker films showing little dependence for absorption coefficient on thin film thickness in infra-red region of the wavelength. It was found from the optical properties studies that the type of transition of Te film is direct transition. Also, the optical energy band gap was evaluated for different thicknesses. The results have shown that the optical energy band gap was increased by the increase of thickness. Experiments and measurement results are presented.

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Electrical And Optical Properties Of Polycrystalline CdO Thin Films

Cited by 20 publications

References 28 publications

Study the effect of thickness and annealing temperature on the Electrical Properties of CdTe thin Films

Study the effect of thickness and annealing temperature on the Electrical Properties of CdTe thin Films

Study of physical properties of CdO Thin film prepared by Chemical spray pyrolysis Technique

Influence of Thickness on Electrical and Optical Properties of Tellurium Thin Films Deposited by Chemical Spray Pyrolysis

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