Conference on Optoelectronic and Microelectronic Materials and Devices, 2004.
DOI: 10.1109/commad.2004.1577490
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Electrical and Optical Simulation of Tris (8-hydroxyquinoline) Aluminium-Based Microcavity Organic Light Emitting Diode (MOLED)

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Cited by 4 publications
(4 citation statements)
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“…As we can see from Fig. 5, the maximum emission intensity can be obtained by adapting the thickness of ETL and HTL 36 and 100 nm ,respectively, because the emission layer at these thicknesses is aligned with the position of the antinode of the resonant cavity (Chan et al 2004(Chan et al , 2006.…”
Section: Resultsmentioning
confidence: 98%
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“…As we can see from Fig. 5, the maximum emission intensity can be obtained by adapting the thickness of ETL and HTL 36 and 100 nm ,respectively, because the emission layer at these thicknesses is aligned with the position of the antinode of the resonant cavity (Chan et al 2004(Chan et al , 2006.…”
Section: Resultsmentioning
confidence: 98%
“…The simulation of microcavity QDLED is based on the model that has been recently developed by Chan et al (2004) for microcavity OLED. The external emission spectrum of microcavity light-emitting diode based on semiconductor QD is given by where λ is the emission wavelength, ϕtop, ϕbot are the wavelength dependent phase changes upon reflection from top and bottom mirrors respectively, the phase shift upon reflection from the mirrors is calculated using the matrix method (Macleod 2001), where L = j n j d j is the optical thickness of the cavity (Chan et al 2006), and the summation is performed over all the layers inside the cavity with thicknesses d j , and refractive indices n j (λ), z i is the optical distance of the emitting dipoles to the metal mirror (cathode) with reflectivity R top and R bot is the reflectivity of bottom mirror (Ag), the bottom reflection coefficient was determined by applying matrix formalism with incoherent substrate correction using the modified matrix approach of Katsidis and Siapkas (2002), Mitsas and Siapkas (1995).…”
Section: Description Of Modelmentioning
confidence: 99%
“…The simulator is based on the one-dimensional time-independent drift-diffusion transport model, which models the charge carrier transport inside the organic semiconductor. This model contains the continuity equation for electrons and holes and the charge carrier Proceedings of the 10 th ICEENG Conference, 19-21 April, 2016 EE047 -5 motilities for electrons and holes [14,15]. Poole-Frenkel-like form is the fielddependent mobility model used which is given by [16]…”
Section: Device Model and Simulation Parametersmentioning
confidence: 99%
“…The simulator is based on the one-dimensional time-independent drift-diffusion transport model, which models the charge carrier transport inside the organic semiconductor. This model contains the continuity equation for electrons and holes and the charge carrier motilities for electrons and holes [14,15]. Poole-Frenkel-like form is the field-dependent mobility model used which is given by [16] (2)…”
Section: Device Model and Simulation Parametersmentioning
confidence: 99%