Electrical and optical studies in some Bi doped amorphous chalcogenide thin films

Sedeek, K.; Fadel, M.

doi:10.1016/0040-6090(93)90368-y

Cited by 28 publications

(22 citation statements)

References 12 publications

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“…The electrical resistance was measured as a function of temperature and was calculated according to equation: r dc = l/RWd, where R is the resistance of the sample, d is the sample thickness, l is the spacing between the two electrodes and W is the width of the film. It is observed that the dc conductivity r dc exhibits an activated behaviour in the investigated sample in accordance with the well-known Arrhenius's equation [16,17]:…”

Section: Resultsmentioning

confidence: 55%

Memory switching of ZnGa2Te4 thin films

et al. 2012

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Electrical and switching property of amorphous defect chalcopyrite ZnGa 2 Te 4 thin films prepared by thermal evaporation technique has been studied. The elemental chemical compositions of the prepared bulk as well as the asdeposited film were determined by means of energy dispersive X-ray spectrometry. X-ray diffraction pattern revealed that the powder compound is polycrystalline and the asdeposited and the annealed films at t a B 548 K have the amorphous phase, while that the annealed at t C 573 K are polycrystalline with a single phase of a defect chalcopyrite structure similar to that of the synthesized material. The great advantage of this material is the capability to appear in two different phases, the amorphous and the crystalline phases, with rather different electrical properties. Both dynamic and static I-V characteristics and the switching phenomenon at 601 nm are investigated. The threshold switching mechanism was explained by a thermal model of switching, i.e., joule heating with an electrically conducting channel. ZnGa 2 Te 4 is good candidate in phase change memory device.

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Section: Resultsmentioning

confidence: 55%

Memory switching of ZnGa2Te4 thin films

et al. 2012

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“…Different authors [27][28][29] have suggested different values of m for different glasses. The usual method for determining the values of E opt involves plotting a graph of (αhν) 1/m vs. hν.…”

Section: Energy Band Gapsmentioning

confidence: 99%

Effect of Zinc Incorporation in CuInS₂Thin Films Grown by Vacuum Evaporation Method

Rabeh¹,

Kanzari²,

Rezig³

2009

Acta Phys. Pol. A

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Structural, optical and electrical properties of Zn-doped CuInS2 thin films grown by double source thermal evaporation method were studied. Evaporated thin films were grown from CuInS2 powder by vacuum evaporation using resistively heated tungsten boats. The element Zn was evaporated from a thermal evaporation source. The amount of the Zn source was determined to be 0-4% molecular weight compared with CuInS2 source. The effects of Zn on films properties were investigated using X-ray diffraction, optical transmission and reflection spectra. The films were annealed in vacuum at 260• C for 2 h. The Zn-doped samples have band-gap energy of 1.474-1.589 eV. We found that the Zn-doped CuInS2 thin films exhibit p-type conductivity and we predict that Zn species can be considered as suitable candidates for use as doped acceptors to fabricate CuInS2-based solar cells.

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“…The E A values of 0.7-0.8 eV, characteristic of the unimplanted GeTe films, sharply decrease to 0.2-0.25 eV after implantation of Bi at doses of 5x10 15 ions.cm -2 and 2x10 16 ions.cm -2 [cf. (and () in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…100 nm thick Ge-Sb-Te, GeTe, and Ga-La-S films were prepared by rf sputtering, either on silicon to form heterojunction devices, or on fused silica substrates to probe the conductivity type by means of thermopower measurements. Ion implantation of bismuth was done in a Danfysik ion implanter with ion doses in the range of 1x10 14 -2x10 16 Compositional characterization of Ga-La-S film undertaken previously confirmed that the films were Ga 26 La 12 S 45 O 17 . GeTe films were sputtered from a target of a composition equal to 1:1.…”

Section: Methodsmentioning

confidence: 99%

“…Concerning doping in melt, a slow liquid quench enables a balanced equilibrium with recrystallization acting as a balancing force, thus implying higher doping concentrations are required to shift a melted alloy to a non-homogeneous state of sufficiently perturbed local coordination around an introduced dopant. Non-equilibrium synthesis methods such as thermal evaporation on an unheated substrate have been noticed to facilitated an impurity conductivity with an activation energy E A , smaller than half of the band gap, as in the case of Bi-doped GeTe [16]. The unbalanced charge equilibrium of positively and negatively charged defects would allow to unpin the Fermi level and give rise to charge carriers in the localized band tail states.…”

Section: Introductionmentioning

confidence: 99%

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Electrical properties of Bi-implanted amorphous chalcogenide films

et al. 2015

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The impact of Bi implantation on the conductivity and the thermopower of amorphous . The enhanced conductivity is accompanied by defect accumulation in the films upon implantation as is inferred by using analysis of the space-charge limited current. The results indicate that native coordination defects in lone-pair semiconductors can be deactivated by means of ion implantation, and higher conductivity of the films stems from additional electrically active defects created by implantation of bismuth.2

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Electrical and optical studies in some Bi doped amorphous chalcogenide thin films

Cited by 28 publications

References 12 publications

Memory switching of ZnGa2Te4 thin films

Memory switching of ZnGa2Te4 thin films

Effect of Zinc Incorporation in CuInS₂Thin Films Grown by Vacuum Evaporation Method

Electrical properties of Bi-implanted amorphous chalcogenide films

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Electrical and optical studies in some Bi doped amorphous chalcogenide thin films

Cited by 28 publications

References 12 publications

Memory switching of ZnGa2Te4 thin films

Memory switching of ZnGa2Te4 thin films

Effect of Zinc Incorporation in CuInS2Thin Films Grown by Vacuum Evaporation Method

Electrical properties of Bi-implanted amorphous chalcogenide films

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Product

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Effect of Zinc Incorporation in CuInS₂Thin Films Grown by Vacuum Evaporation Method