Electrical and Photoelectric Properties of Polycrystalline Silicon after High-Intensity Short-Pulse Ion Implantation

Transport charge of gallium arsenide films synthesized on polycrystalline silicon by ion ablation

“…N-type of  and  ph predominate in GaAs/Si, whereas, the concentration of LS donors is higher in comparison with the one of acceptors. The effect of donors increases in the films deposited on the periphery [11,12]. In the centre of deposition, defect contribution increases with their possessing shallow acceptor LS with energy =E v +(0.05-0.16) eV, where E v is a valence band (VB) top.…”

“…The annealing was carried out in vacuum (pressure Р10 -2 Pa, Т ann =300-1000 K). Surface  s and bulk  v dark and photoconductivity  ph = ph - ( ph -conductivity under lighting), photosensitivity K(h)= ph / were measured at constant electrode voltage U=0.01-300 V, at temperature Т=300-700 K and at photon energy h=1.5-4.0 eV [12,13]. The electrodes were deposited onto the film surface by silver thermal spraying.…”

“…where 0 is a pre-exponential factor, T 0 is an activation energy [6,12]. State density N(E F ) near E F was calculated according to T 0 in compliance with [6,12].…”

“…State density N(E F ) near E F was calculated according to T 0 in compliance with [6,12]. The sign of dominant charge carriers was determined according to the method [12].…”

“…The characteristics of such films differ from с-GaAs due to their complex structure and strong defect disordering. Film deposition from plasma produced by a powerful ion beam (PIB) enables to implement high-speed deposition and to form films on significant areas and on various substrates [10][11][12][13]. The peculiarities of electromigration in the films synthesized by the pulse ion ablation (PIA) have been insufficiently studied.…”