Electrical and photoelectric properties of a-Si:H layered films: The influence of thermal annealing

Kurova, I. A.; Ormont, N. N.; Теруков, Е. И.; Трапезникова, И. Н.; Афанасьев, В. П.; Gudovskikh, A. S.

doi:10.1134/1.1356161

Cited by 4 publications

(3 citation statements)

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“…Films of amorphous hydrogenated silicon ( a -Si:H) with nanocrystalline ( nc -Si) inclusions nowadays attract considerable attention [1][2][3][4][5][6]. This interest is due to the high photosensitivity of a -Si:H 〈 nc -Si 〉 films compared with homogeneous hydrogenated films [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…This interest is due to the high photosensitivity of a -Si:H 〈 nc -Si 〉 films compared with homogeneous hydrogenated films [1][2][3][4]. It is assumed that nanocrystalline inclusions partially relieve mechanical stresses in an amorphous matrix, thus opening the way to formation of less a strained network with a lower concentration of weak bonds, which is less subject to degradation.…”

Section: Introductionmentioning

confidence: 99%

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TEM Study of the Formation and Modification of Nanocrystalline Si Inclusions in a-Si:H Films

Afanasiev¹

2004

Semiconductors

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Transmission electron microscopy has been used to investigate the formation and modification of the nanocrystalline silicon ( nc -Si) phase in thin a -Si:H films. The films were produced by three different methods: plasmochemical deposition of a-Si:H, cyclic plasmochemical deposition with intermediate annealing of layers 10-20 nm in thickness in hydrogen plasma, and plasmochemical deposition of a -Si:H with the annealing of 40-nm-thick films in hydrogen plasma. In the films produced by cyclic deposition with intermediate annealing in hydrogen plasma and subsequent thermal treatment at 750 ° C for 30 min, the size of nanocrystallites does not exceed the thickness of a layer deposited in a cycle. In contrast, in uniform films with similar thermal treatment, crystallites may be as large as 1 µ m or more. Models that account for the effects observed are suggested. These models are validated by calculating profiles of hydrogen diffusion in a -Si:H film after annealing in hydrogen plasma and thermal treatment in vacuum. © 2004 MAIK "Nauka/Interperiodica". nmFig. 1. Cross-sectional TEM image of a -Si:H film produced by cyclic deposition.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

TEM Study of the Formation and Modification of Nanocrystalline Si Inclusions in a-Si:H Films

Afanasiev¹

2004

Semiconductors

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“…In addition, other specific features of the layered films' photoelectric properties were found [2,3]. It was established that there is no effect of temperature quenching of the photoconductivity in a wide range of film illumination intensities in the case of interband carrier generation in the films.…”

Section: Introductionmentioning

confidence: 98%