We study the effect of high-temperature annealing on the conductivity temperature dependence of a-Si:H films. Two types of films were studied: uniform and nanolayered prepared by cyclic repetition of CVD and hydrogen plasma treatment. It is shown that for annealing temperatures above 450 °C, the lowtemperature conductivity obeys the law ln σ = const -(T 0 /T) n , where the exponent is n≅1/4 for uniform and n≅1/3 for layered films indicating two-dimensional conduction for layered films. It is argued that the measurements of the conductivity temperature dependence can provide information about spacial distribution of defects produced by HTA and about the defect creation mechanism.

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