Electrical and photoelectric properties of nanostructures obtained by electroless etching of silicon

Mechanisms of Frequency-Dependent Conductivity of Mesoporous Silicon at γ Irradiation with Small Doses

“…The technology of obtaining Al−SiMP−p + -Si−Al struc-tures was described earlier [3]. The samples were obtained at the same technological mode, but there can be minor fluctuations in technological factors, which probably lead to a more subtle influence on the structure of the layers [6]. A beam of γ-quantum of braking radiation of the betatron of Saratov State University was used to irradiate the obtained structures at maximum energy E γ max = 25 MeV.…”