Mechanisms of Frequency-Dependent Conductivity of Mesoporous Silicon at γ Irradiation with Small Doses

Abstract

The effect of low-dose γ radiation on the mechanisms of low-frequency conductivity of mesoporous silicon has been studied. It has been shown that γ irradiation preserves the hopping character of conductivity at a change of the frequency of phonon lattice vibrations, a decrease in the size of the hop, and a shift of the level of the capture of traps to the Fermi level in the band gap, which makes the structure with mesoporous silicon irradiated by γ radiation promising for the creation of multifunctional resistive and capacitive devices.

Mathematical Modeling of Dielectric Permeability and Volt-Ampere Characteristics of a Semiconductor Nanocomposite Conglomerate

“…One of the more urgent technical tasks is the creation of varistors with improved characteristics based on polycrystalline nanocomposites [13]. As a rule, such materials are conglomerates of semiconductor grains, the bulk properties of which are linear over a wide range of voltages, and the contacts between grains have a nonlinear volt-ampere characteristic (VAC).…”

Nanostructured Porous Silicon Layers Formation at Low Doses of γ-Radiation

“…At the same time, it is supposed that at the fi rst stage of exposure, point defect transformations prevail and result in a decrease in the initial defect. At the next stage of radiation exposure, the concentration of radiation defects grows and, as a result, they predominantly infl uence the semiconductor properties [9][10][11][12][13][14][15][16][17][18].…”