Electrical and photoelectrical properties of MIS structures with rare earth oxide films as insulator

Rozhkov, V. A.; Goncharov, V. P.; Trusova, A. Yu.

doi:10.1109/icsd.1995.523047

Cited by 6 publications

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“…Of these oxides, Sm 2 O 3 has been seen as one of the most promising candidates due to its high dielectric constant (∼15), a wide bandgap (4.33 eV), high conduction barrier (>1 eV), high breakdown electric field (5-7 MV/cm), and its good thermal stability when in direct contact with Si [14,[18][19][20][21][22][23][24][25]. Various deposition methods have been studied, such as metallo-organic chemical vapour deposition [26], pulsed laser deposition (PLD) [27], thermal evaporation [28], vacuum evaporation [29], resistive evaporation [30], anodisation [25], direct current (DC), and radio frequency (RF) sputtering [14,20,21,31,32].…”

Section: Introductionmentioning

confidence: 99%

Influence of applied voltage on the physical and electrical properties of anodic Sm ₂ O ₃ thin films on Si in 0.01 M NaOH solution

Wong

Lee

Goh

2017

Micro & Nano Letters

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Formation of anodic samarium oxide thin film by anodisation of 15 nm thin sputtered samarium metal on silicon substrate was systematically investigated. Sputtered Sm on Si substrate was followed by anodisation in 0.01 M NaOH (pH 11) at various applied voltages (10, 15, 20, and 25 V). All anodisation processes were performed for 10 min at room temperature in the bath with constant stirring. The crystallinity of Sm 2 O 3 film was evaluated by X-ray diffraction analysis. The crystallite size of Sm 2 O 3 was calculated by Scherrer equation. The cross-section of 20 V sample was examined by high-resolution transmission electron microscope. The sample anodised at 20 V demonstrated the highest electrical breakdown field of 9.50 MV/cm at 10 −4 A/cm 2. This is attributed to the lowest effective oxide charge, slow trap charge density, average interface trap density, and total interface trap density.

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Section: Introductionmentioning

confidence: 99%

Influence of applied voltage on the physical and electrical properties of anodic Sm ₂ O ₃ thin films on Si in 0.01 M NaOH solution

Wong

Lee

Goh

2017

Micro & Nano Letters

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Effect of Oxidation Temperature on Physical and Electrical Properties of Sm2O3 Thin-Film Gate Oxide on Si Substrate

Goh

Haseeb

Wong

2016

Journal of Elec Materi

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Thermal oxidation of 150-nm sputtered pure samarium metal film on silicon substrate has been carried out in oxygen ambient at various temperatures (600°C to 900°C) for 15 min and the effect of the oxidation temperature on the structural, chemical, and electrical properties of the resulting Sm 2 O 3 layers investigated. The crystallinity of the Sm 2 O 3 films and the existence of an interfacial layer were evaluated by x-ray diffraction (XRD) analysis, Fouriertransform infrared (FTIR) spectroscopy, and Raman analysis. The crystallite size and microstrain of Sm 2 O 3 were estimated by Williamson-Hall (W-H) plot analysis, with comparison of the former with the crystallite size of Sm 2 O 3 as calculated using the Scherrer equation. High-resolution transmission electron microscopy (HRTEM) with energy-dispersive x-ray (EDX) spectroscopy analysis was carried out to investigate the cross-sectional morphology and chemical distribution of selected regions. The activation energy or growth rate of each stacked layer was calculated from Arrhenius plots. The surface roughness and topography of the Sm 2 O 3 layers were examined by atomic force microscopy (AFM) analysis. A physical model based on semipolycrystalline nature of the interfacial layer is suggested and explained. Results supporting such a model were obtained by FTIR, XRD, Raman, EDX, and HRTEM analyses. Electrical characterization revealed that oxidation temperature at 700°C yielded the highest breakdown voltage, lowest leakage current density, and highest barrier height value.

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Silicon MIS structures using samarium oxide films

Rozhkov¹,

Trusova²,

Berezhnoy³

1998

Thin Solid Films

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Electrical and photoelectrical properties of MIS structures with rare earth oxide films as insulator

Cited by 6 publications

References 1 publication

Influence of applied voltage on the physical and electrical properties of anodic Sm ₂ O ₃ thin films on Si in 0.01 M NaOH solution

Influence of applied voltage on the physical and electrical properties of anodic Sm ₂ O ₃ thin films on Si in 0.01 M NaOH solution

Effect of Oxidation Temperature on Physical and Electrical Properties of Sm2O3 Thin-Film Gate Oxide on Si Substrate

Silicon MIS structures using samarium oxide films

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Electrical and photoelectrical properties of MIS structures with rare earth oxide films as insulator

Cited by 6 publications

References 1 publication

Influence of applied voltage on the physical and electrical properties of anodic Sm 2 O 3 thin films on Si in 0.01 M NaOH solution

Influence of applied voltage on the physical and electrical properties of anodic Sm 2 O 3 thin films on Si in 0.01 M NaOH solution

Effect of Oxidation Temperature on Physical and Electrical Properties of Sm2O3 Thin-Film Gate Oxide on Si Substrate

Silicon MIS structures using samarium oxide films

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Product

Resources

About

Influence of applied voltage on the physical and electrical properties of anodic Sm ₂ O ₃ thin films on Si in 0.01 M NaOH solution

Influence of applied voltage on the physical and electrical properties of anodic Sm ₂ O ₃ thin films on Si in 0.01 M NaOH solution