Electrical and Photoelectrochemical Properties of Thin MoS2 Films Produced by Electrodeposition

Majidzade, V.A.; Jafarova, Sevda; Kasimogli, I.; Eminov, Sh. O.; Aliyev, A.M.; Azizova, A. N.; Тагиев, Д. Б.

doi:10.1134/s0020168521040105

Cited by 1 publication

(1 citation statement)

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“…It is important to emphasize that the properties of such thin metal chalcogenide films can be carefully adjusted and optimized by controlling their thickness, composition and microstructure. This makes it possible to obtain materials with unique properties that can be used to develop new devices and technologies [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

THE LATEST PROGRESS ON SYNTHESIS AND INVESTIGATION OF Sb2S3-BASED THIN FILMS

Majidzade¹,

Jafarova²,

Javadova³

et al. 2023

Chemical Problems

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Sb2S3 is stable under environmental conditions and a promising semiconductor material for optoelectronic applications, its potential capabilities in solar cells, photodetectors, and other devices are being investigated. It has an indirect-band gap of approximately 1.7-1.9 eV depending on the crystal structure which makes it suitable for absorption of visible light and its use in solar batteries. Sb2S3 can exist in different crystal structures including orthorhombic and hexagonal structures. The crystal structure can significantly affect the electronic and optical properties, which makes it possible to adapt its properties for specific applications using crystal structure engineering. It also has great optical properties and high absorption coefficients in the visible and near-infrared regions of the spectrum and makes it suitable for use in photogalvanics and photodetectors. Although there are various methods for obtaining this material, further research and development are needed to optimize its properties, improve productivity, and explore new applications.

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