Electrical and photovoltaic characteristics of Ni/(n)Bi2S3 Schottky barrier junction

Hussain, Amir; Rahman, A.

doi:10.1016/j.spmi.2014.12.030

Cited by 5 publications

(3 citation statements)

References 51 publications

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“…In addition, the voltammogram showed the nonlinear current density–voltage characteristics, indicating that Bi 2 S 3 was experiencing the Schottky contact . The efficiency of Bi 2 S 3 was lower than in the similar work by Hussain and Rahman, but both devices have the Schottky character . The J – V curve for the Bi 2 S 3 photovoltaic solar cell depicted a high solar efficiency at 100 mW/cm 2 .…”

Section: Resultsmentioning

confidence: 77%

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Microwave-Assisted Synthesis of Bi₂S₃ and Sb₂S₃ Nanoparticles and Their Photoelectrochemical Properties

2021

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Bi2S3 and Sb2S3 nanoparticles were prepared by microwave irradiation of single-source precursor complexes in the presence of ethylene glycol as a coordinating solvent. The as-synthesized nanoparticles were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM) coupled with energy-dispersive X-ray (EDX), photoluminescence (PL), and UV–vis near-infrared (NIR) spectroscopy. Their electrochemical potential was examined in [Fe(CN)]4–/[Fe(CN)]3– by cyclic and square wave voltammetry (CV and SWV) and electrochemical impedance spectroscopy (EIS). GCEBi2S3 and GCESb2S3 exhibit promising electrochemical performance and a higher specific capacitance of about 700–800 F/g in [Fe(CN)]4–/[Fe(CN)]3. Thin films of Bi2S3 and Sb2S3 were successfully incorporated in the fabrication of solar cell devices. The fabricated device using Bi2S3 (under 100 mW/cm2) showed a power conversion efficiency (PCE) of 0.39%, with a V oc of 0.96 V, a J sc of 0.00228 mA/cm2, and an FF of 44%. In addition, the device exhibits nonlinear current density–voltage characteristics, indicating that Bi2S3 was experiencing a Schottky contact. The Sb2S3-based solar cell device showed no connection in the dark and under illumination. Therefore, no efficiency was recorded for the device using Sb2S3, which indicated the ohmic nature of the film. This might be due to the current leakage caused by poor coverage. The nanoparticles were found to induce similar responses to the conventional semiconductor nanomaterials in relation to photoelectrochemistry. The present study indicates that Bi2S3 and Sb2S3 nanoparticles are promising semiconductor materials for developing optoelectronic and electrochemical devices as the films experience Schottky and Ohmic contacts.

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Section: Resultsmentioning

confidence: 77%

“…75 The efficiency of Bi 2 S 3 was lower than in the similar work by Hussain and Rahman, but both devices have the Schottky character. 76 The J−V curve for the Bi 2 S 3 photovoltaic solar cell depicted a high solar efficiency at 100 mW/cm 2 . This might be due to its near-infrared ability to absorb light at high intensity.…”

Section: Resultsmentioning

confidence: 96%

Microwave-Assisted Synthesis of Bi₂S₃ and Sb₂S₃ Nanoparticles and Their Photoelectrochemical Properties

2021

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“…In the case of the Al/ DNA/ITO/Al junction, the Richardson constant of the semiconductor component or ITO is used to measure the barrier height. 31,32) However, DNA molecules in general have yet to be studied as proper semiconductor materials. Measurements of the barrier height of the Cu/DNA/Cu junction in this work therefore cannot be ascertained since the Richardson constant of DNA is unknown.…”

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confidence: 99%

Investigating the electronic properties of shrimp synthetic viral DNAs integrated within Schottky junctions

Chan¹,

Bhassu²,

Periasamy³

2020

Appl. Phys. Express

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In this report, DNA-specific Schottky junctions were used for studying electronic properties of selected viral-derived DNAs. Two junction types were studied in this work; Al//DNA/ITO/Al and Cu/DNA/Cu using synthetic sequences of viral infecting shrimps commonly found in aquaculture. Two models based on thermionic emission theory were employed to calculate selected solid-state parameters. The ideality factor for example calculated using Cheung’s method for all viral DNA samples showed values between 11.27 to 17.56 and 8.35 to 8.67 when using the Al/DNA/ITO/Al and Cu/DNA/Cu junctions, respectively. In general, characteristic profiles and parameters were observed for all DNA sequences studied using both junctions.

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Electrical characterizations of Au/ZnO/n-GaAs Schottky diodes under distinct illumination intensities

Tan

Tecimer

Çіçek

et al. 2016

J Mater Sci: Mater Electron

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Electrical and photovoltaic characteristics of Ni/(n)Bi2S3 Schottky barrier junction

Cited by 5 publications

References 51 publications

Microwave-Assisted Synthesis of Bi₂S₃ and Sb₂S₃ Nanoparticles and Their Photoelectrochemical Properties

Microwave-Assisted Synthesis of Bi₂S₃ and Sb₂S₃ Nanoparticles and Their Photoelectrochemical Properties

Investigating the electronic properties of shrimp synthetic viral DNAs integrated within Schottky junctions

Electrical characterizations of Au/ZnO/n-GaAs Schottky diodes under distinct illumination intensities

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Electrical and photovoltaic characteristics of Ni/(n)Bi2S3 Schottky barrier junction

Cited by 5 publications

References 51 publications

Microwave-Assisted Synthesis of Bi2S3 and Sb2S3 Nanoparticles and Their Photoelectrochemical Properties

Microwave-Assisted Synthesis of Bi2S3 and Sb2S3 Nanoparticles and Their Photoelectrochemical Properties

Investigating the electronic properties of shrimp synthetic viral DNAs integrated within Schottky junctions

Electrical characterizations of Au/ZnO/n-GaAs Schottky diodes under distinct illumination intensities

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Product

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Microwave-Assisted Synthesis of Bi₂S₃ and Sb₂S₃ Nanoparticles and Their Photoelectrochemical Properties

Microwave-Assisted Synthesis of Bi₂S₃ and Sb₂S₃ Nanoparticles and Their Photoelectrochemical Properties