Electrical and structural characteristics of non-stoichiometric Cu-based delafossites

Ashmore, Nathan; Cann, David P.

doi:10.1007/s10853-005-0781-x

Cited by 22 publications

(9 citation statements)

References 31 publications

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“…A combination of XRD and SEM/EDS data suggests that solid state synthesized CuGaO 2 delafossite ceramics tolerate very little variation in the Cu stoichiometry in Cu x GaO 2 [67]. Secondary phases were clearly observed at non-stoichiometric compositions x = 0.98 and x = 1.02.…”

Section: Electrical Properties Of Delafossitesmentioning

confidence: 93%

Crystal chemistry and electrical properties of the delafossite structure

2006

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Section: Electrical Properties Of Delafossitesmentioning

confidence: 93%

Crystal chemistry and electrical properties of the delafossite structure

2006

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“…In principles, thick hole transporting layers are needed for reliable printed electronics device performance. The PEDOT:PSS conductivity is ~0.1 S/cm, which is about 10 times higher compared to CuGaO2 conductivity (0.02 -0.03 S/cm) as a result of lower metal oxide conductivity the thickness of CuGaO2 HTL is limited [52,53]. The current density versus voltage characteristic (J-V) curves of the best performing p-i-n devices under illumination and dark conditions are demonstrated in Fig.…”

Section: Device Performancementioning

confidence: 99%

Employing surfactant-assisted hydrothermal synthesis to control CuGaO2 nanoparticle formation and improved carrier selectivity of perovskite solar cells

Papadas¹,

Savva²,

Ioakeimidis³

et al. 2018

Materials Today Energy

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Delafossites like CuGaO2 have appeared as promising p-type semiconductor materials for opto-electronic applications mainly due to their high optical transparency and 2 electrical conductivity. However, existing synthetic efforts usually result in particles with large diameter limiting their performance relevant to functional electronic applications. In this article, we report a novel surfactant-assisted hydrothermal synthesis method, which allows the development of ultrafine (~5 nm) monodispersed p-type CuGaO2 nanoparticles (NPs). We show that DMSO can be used as a ligand and dispersing solvent for stabilizing the CuGaO2 NPs. The resulting dispersion is used for the fabrication of dense, compact functional CuGaO2 electronic layer with properties relevant to advanced optoelectronic applications. As a proof of concept, the surfactant-assisted hydrothermal synthesized CuGaO2 is incorporated as a hole transporting layer (HTL) in the inverted p-i-n perovskite solar cell device architecture providing improved hole carrier selectivity and power conversion efficiency compared to conventional PEDOT:PSS HTL based perovskite solar cells.

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“…Based on Cu2O chemistry, it could be assumed that the defects responsible of the p-type behaviour would be rather related to copper vacancies, the delafossite having weak tolerance for Cu non-stoichiometry, and/or interstitial oxygen defects while having higher activation energy and thus a lower probability to occur [1][47]. However, a study dealing with the cationic vacancy in CuGaO2 revealed that the p-type charge carrier is rather related to oxygen overstoichiometry [48].…”

Section: Electronic Transport Propertiesmentioning

confidence: 99%