2008
DOI: 10.1016/j.ijhydene.2008.02.037
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Electrical and structural properties of nano-crystalline silicon intrinsic layers for nano-crystalline silicon solar cells prepared by very high frequency plasma chemical vapor deposition

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Cited by 17 publications
(9 citation statements)
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“…It is because the electron temperature (Si* / SiH*) is increasing along with RF power increase. Ion bombardment will cause structure of film becoming friable with heavy defects and thus decreases the deposition rate [16,17] which appears beyond 33mW/cm 2 as shown in Figure 3. Based on the above results, by adjusting the RF power, Hα* / Si* or Hα* / SiH* can't become a crystallinity index.…”
Section: Resultsmentioning
confidence: 99%
“…It is because the electron temperature (Si* / SiH*) is increasing along with RF power increase. Ion bombardment will cause structure of film becoming friable with heavy defects and thus decreases the deposition rate [16,17] which appears beyond 33mW/cm 2 as shown in Figure 3. Based on the above results, by adjusting the RF power, Hα* / Si* or Hα* / SiH* can't become a crystallinity index.…”
Section: Resultsmentioning
confidence: 99%
“…After continuous AM1.5 where a strong device degradation, sometimes exceeding 20% has been reported [46]. These data cannot be compared with industry data where the devices are differently processed, as are the recent reported data from MVSystems and United Solar for instance [64][65][66][67][68][69]. The aim is to prove the consistency of the laboratory results [63] and the integration of these nanostructured silicon thin films in device structure such as solar cells, thin film position sensitive detectors and thin film transistors.…”
Section: Solar Cellsmentioning
confidence: 99%
“…Recently, nanosilicon attracting great attention from world scientists and some properties of this matter studied theoretically and experimentally [1][2][3][4][5][6][7]. Nano Si also has a wide range of application areas as electronics materials, particularly in space electronics and nuclear technologies [8][9][10][11][12][13][14].…”
Section: Introductionmentioning
confidence: 99%