Electrical and structural properties of Ta–N thin film and Ta/Ta–N multilayer for embedded resistor

Effect of Sputtering Power on the Properties of TaN Thin Films Prepared by the Magnetron Sputtering

“…TaN film material is widely used in many fields because of its excellent performances [1][2][3][4][5][6]. In the semiconductor industry, TaN film is used as a copper diffusion barrier layer mainly due to its high electrical conductivity and good thermal stability.…”

Fabrication of Ta–Si–N/Ag nanocomposite thin films with near-zero temperature coefficient of resistance

“…This will increase the resistance of electrical circuits significantly and thus affect the results and performances in the fields of precision measurements, electronics, sensors, and so on [1][2][3][4][5]. Hence, it is urgent to develop appropriate methods fabricating high-performance film resistors with near-zero temperature coefficient of resistance (TCR), that is, the resistivity of the materials should keep at a constant value no matter how the temperature changes [6].…”

“…In particular, Ta 2 N is a promising candidate used for embedding matrix because of the temperature insensitive resistivity, good chemical inertness and corrosion resistance [12,13]. Ta 2 N thin films exhibited the resistivity of 180~230 μΩ·cm and a TCR value of -100~-287 ppm/K [6,14]. The resistivity and TCR of Ta 2 N thin films depend on the process parameters, for example, the N 2 partial pressure in the magnetron sputtering.…”

“…The resistivity and TCR of Ta 2 N thin films depend on the process parameters, for example, the N 2 partial pressure in the magnetron sputtering. It is still very difficult to fabricate near-stoichiometric Ta 2 N films even under a N 2 partial pressure of 3-5% [6,14,15]. Moreover, Ta 3 N 5 thin films with large resistivity and negative TCR are unexpectedly produced at a high N 2 partial pressure [6,16].…”

“…It is still very difficult to fabricate near-stoichiometric Ta 2 N films even under a N 2 partial pressure of 3-5% [6,14,15]. Moreover, Ta 3 N 5 thin films with large resistivity and negative TCR are unexpectedly produced at a high N 2 partial pressure [6,16]. Ag and Cu were incorporated to solve this issue and an appropriate resistivity of 1450~5900 μΩ·cm and a near-zero TCR of +14~+350 ppm/K were obtained [16][17][18][19][20].…”