Electrical and structural properties of thin gold films obtained by vacuum evaporation and sputtering

Adamov, M.; Perović, B.; Nenadović, T.

doi:10.1016/0040-6090(74)90254-5

Cited by 75 publications

(31 citation statements)

References 9 publications

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“…22 This lateral self-assembly is explored by measuring the conductivity of a gold nanoparticle film on mica that has been exposed to PDI. Evaporating gold films on mica (and other insulating substrates) [23][24][25][26][27][28] provides a simple method for growing isolated nanoparticles with different spacings merely by ensuring that the gold film thickness remains below a critical value, above which a continuous film is formed. The success of this approach relies on the oligomers being sufficiently mobile to bridge between nanoparticles.…”

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confidence: 99%

Linking gold nanoparticles with conductive 1,4-phenylene diisocyanide–gold oligomers

et al. 2013

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A major challenge to fabricating molecular electronic circuits 1 is the difficulty of simultaneously chemically bonding molecular components to two metal electrodes. This can be accomplished by adjusting the electrode separation to match the molecular dimensions using break junctions 2-5 or by using a sharp tip to vary the electrode-surface spacing. 6 Such approaches provide detailed information on molecular conduction, but are not easily extended to planar systems required for a realistic circuit. 7Molecularly linked nanoparticles have been synthesized in solution and deposited onto surfaces 7,8 but the location of the nanoparticles in the circuit is dictated by the cross-linking structure. Ordered assemblies have been formed from functionalized nanoparticles but they are often not covalently connected. Finally, the length of the molecular linker can be matched to the nanoparticle spacing but requires the molecular size to be tailored to the separation of the nanoparticles. 10An alternative strategy is proposed based on recent observations that molecules that bind strongly to metals with low cohesive energies such as gold or copper can oligomerize by extracting metal atoms from the substrate.11-14 An example of this is the lateral self-assembly of 1,4-phenylene diisocyanide (PDI) on Au(111) that forms -(Au-PDI) n -oligomers comprising long, one-dimensional chains by extracting low-coordination gold atoms from surface defect sites. [15][16][17] The relatively short (B1.1 nm) repeat distance between gold atoms in the oligomer suggests the possibility of being able to chemically bond between gold nanoparticles with various separations by incorporating a number of repeat units until the gap is bridged. PDI has been previously proposed as a prototypical molecular electronic component, 4,6,[18][19][20][21] and theory suggests that PDI is a suitable candidate for device applications. 22This lateral self-assembly is explored by measuring the conductivity of a gold nanoparticle film on mica that has been exposed to PDI. Evaporating gold films on mica (and other insulating substrates)23-28 provides a simple method for growing isolated nanoparticles with different spacings merely by ensuring that the gold film thickness remains below a critical value, above which a continuous film is formed. The success of this approach relies on the oligomers being sufficiently mobile to bridge between nanoparticles. This mobility is illustrated in Fig. 1, which displays a typical series of 15 consecutive STM images (taken 53 seconds apart) of a saturated layer of Au-PDI chains on Au (111) showing the repeated lateral motion of an entire chain, where a line is drawn to highlight the chain motion, showing nine hopping events corresponding

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confidence: 99%

Linking gold nanoparticles with conductive 1,4-phenylene diisocyanide–gold oligomers

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“…Each metal within the combination exhibits a different tensile film stress. 17 Trapped during deposition are vacancies on the Au surface and at grain boundaries, [18][19][20] which increase R over its bulk value. 18 The thermal conductivity κ in Eq.…”

Section: Resistancesmentioning

confidence: 99%

Electro-thermal resistance of GaAs interconnects

Wartenberg¹,

Zhao

Liu

2005

Journal of Elec Materi

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This paper describes the effect of steady-state heating on the electrical and thermal resistance of interconnects on GaAs. Examined is a typical dual-layer metal interconnect system, common to GaAs processing. The interconnect system is considered in three parts, the interconnect metals, the Si 3 N 4 dielectric surrounding the metal, and the Al x Ga 1-x As epitaxial substrate. Using a meandering line as a test structure, measurements show how the direct current (DC) resistance increases with both temperature and dissipated power. Thermal resistors are proposed to account for self-heating and thermal coupling.

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“…Structural investigation of sputtered and evaporated Au thin films have shown to be discontinuous before a certain threshold at a thickness of some hundred angstroms, and only when the film thickness is greater than 30 nm do the films become completely continuous [11]. Non-ohmic behavior of discontinuous thin Au films studied theoretically in the past, usually attributes to different mechanisms of electron-transport between separate metal islands [13].…”

Section: Introductionmentioning

confidence: 99%

“…More recently, the kinetic growth of Au film was described by in situ STM during deposition [9] and annealing process [10]. In reported studies the rapid increase in resistivity at lower thickness is associated to the transition from a continuous to a discontinuous film structure [11,12].…”

Section: Introductionmentioning

confidence: 99%