Electrical and Thermal Conduction in Atomic Layer Deposition Nanobridges Down to 7 nm Thickness

Yoneoka, S.; Lee, Jae-Ho; Liger, M.; Yama, G.; Kodama, Takashi; Gunji, Marika; Provine, J.; Howe, Roger T.; Goodson, Kenneth E.; Kenny, Thomas W.

doi:10.1021/nl203548w

Cited by 67 publications

(79 citation statements)

References 31 publications

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“…All of the W surface atoms were in the highest oxidation state in the form of crystalline WO 3 [32,33]. The peak shape, however, remained slightly less symmetric.…”

Section: X-ray Photoelectron Spectroscopymentioning

confidence: 94%

“…The W5p3/2 peak was in the higher BE side of W4f5/2. The W5p3/2 invariably accompanied with the W4f peak with nearly unchangeable relative peak position and intensity [32].…”

Section: X-ray Photoelectron Spectroscopymentioning

confidence: 96%

“…By increasing the growth time, the conductivity of the sample increases, this may be due to an increase in the number of nanowires on the sample surface which increases the available free charge carriers. On the other hand, based on experimental results [30][31][32]35], it was found that the number and size of nanowires have apparent influence on the electrical properties, which is in good agreement with the theoretical models [33,34]. For studying the electrical conductivity in nanostructures, based on the Matthiessen's and Bloch-Grü-neisen theory [34], the electrical resistivity depends on two factors: (1) the residual resistivity (due to structural scatterings caused by grain boundary, impurity and surface).…”

Section: Sem Analysismentioning

confidence: 99%

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Effect of growth time on structural, morphological and electrical properties of tungsten oxide nanowire

et al. 2018

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In this work, tungsten oxide nanowires were grown directly on a tungsten substrate in 800 °C using thermal evaporation method in a horizontal tube furnace. The effect of growth time on structural, morphological, elemental composition and electrical properties of the tungsten oxide nanostructures was investigated using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), X-ray photoelectron spectroscopy (XPS) technique and KIETHLEY 2361 system. Our experimental results show that tungsten oxide nanowires crystalline phase, electrical conductance and density on the substrate surface depend on the growth time. The XRD results showed that tungsten oxide nanowires are synthesized with a cubic WO 3 structure. Moreover, the lattice strain, grain size and dislocation density were obtained in three different growth time. It is noteworthy that by increasing the growth time the crystallinity increases. The FESEM images at different growth times showed that the nanowires on grains begin to germinate when the growth time increases to 6 h. At this time, nanowire structures with 1 µm in diameter and 40 µm in length were formed and continued to grow which caused a change in the morphology. In addition, the XPS results showed that the sample that has grown at longer growth time exhibit two asymmetric W4d5/2 and W4d3/2 peak at 252 and 263 eV which can be assigned to W5+ and W4+ species, respectively. Moreover, the linear I-V curves are obtained and it is found that by increasing the growth time, the conductivity of the sample increases due to increasing number of wires on the sample surface. Finally, the conditions and mechanism of WO 3 nanowire growth are discussed. The results can be used to guide a better understanding about the growth behavior of WO 3 nanowires and can contribute towards the development of novel nanodevices.

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“…All of the W surface atoms were in the highest oxidation state in the form of crystalline WO 3 [32,33]. The peak shape, however, remained slightly less symmetric.…”

Section: X-ray Photoelectron Spectroscopymentioning

confidence: 94%

“…The W5p3/2 peak was in the higher BE side of W4f5/2. The W5p3/2 invariably accompanied with the W4f peak with nearly unchangeable relative peak position and intensity [32].…”

Section: X-ray Photoelectron Spectroscopymentioning

confidence: 96%

Section: Sem Analysismentioning

confidence: 99%

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Effect of growth time on structural, morphological and electrical properties of tungsten oxide nanowire

et al. 2018

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“…[1][2][3][4][5][6][7][8] Based on these superior properties, ALD has been intensively studied for several applications. In particular, textile electronics using the ALD is one of the promising fields since several materials can be readily deposited at temperatures lower than 150°C by ALD, leading to the effective functionalization of thermally fragile substrates such as plastics, cellulose papers and polymeric textiles.…”

Section: Introductionmentioning

confidence: 99%

Highly conductive and flexible fiber for textile electronics obtained by extremely low-temperature atomic layer deposition of Pt

et al. 2016

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Thermal atomic layer deposition (ALD) of metal has generally been achieved at high temperatures of around 300°C or at relatively low temperatures with highly reactive counter reactants, including plasma radicals and O 3 , which can induce severe damage to substrates. Here, the growth of metallic Pt layers by ALD at a low temperature of 80°C is achieved by using [(1,2,5,6-η)-1,5-hexadiene]-dimethyl-platinum(II) (HDMP) and O 2 as the Pt precursor and counter reactant, respectively. ALD results in the successful growth of continuous Pt layers at the low temperature without any reactive reactants owing to the low activation energy of the HDMP precursor for surface reactions. Because of the high reactivity of the precursor, the growth of a pure Pt layer is achieved on various thermally weak substrates, leading to the fabrication of high-performance conductive cotton fibers by ALD. A capacitive-type textile pressure sensor is successfully demonstrated by stacking elastomeric rubber-coated conductive cotton fibers perpendicularly and integrating them onto a fabric with a 7 × 8 array configuration to identify the features of the applied pressure, which can be effectively utilized as a new platform for future wearable and textile electronics. INTRODUCTIONAtomic layer deposition (ALD) has widely attracted considerable interest for various high technologies, such as semiconductor devices and display devices, 1-3 because of its superb ability to deposit ultrathin films with excellent controllability and conformality even on complex three-dimensional (3D) structures. 1-8 Based on these superior properties, ALD has been intensively studied for several applications. In particular, textile electronics using the ALD is one of the promising fields since several materials can be readily deposited at temperatures lower than 150°C by ALD, leading to the effective functionalization of thermally fragile substrates such as plastics, cellulose papers and polymeric textiles. [9][10][11][12] Chen et al. 13 demonstrated hydrophobic silk fabrics with a high laundering durability and robustness due to a TiO 2 coating deposited by ALD. However, in the case of metal ALD, since temperatures as high as 300°C are generally required to achieve successful deposition with the thermal energy of the precursor reactions, it is difficult to deposit conformal metal films onto thermally weak substrates using ALD, causing difficulties in a wide range of applications, including textile electronics. 14,15 To ensure successful metal ALD at low temperatures, ALD in which the

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“…Gu et al [23] used amorphous Al 2 O 3 (α-Al 2 O 3 ) as the shield layer, which has a higher thermal conductivity than SiO 2 or SiN x and can be produced via thin-film deposition techniques. The thermal properties of SiO 2 [69] and Si 3 N 4 [69] deposited via plasma-enhanced chemical vapor deposition, and α-Al 2 O 3 deposited via atomic layer deposition (ALD) [70][71][72] are listed in Table 1.…”

Section: Nanolaser Design For Improved Thermal Performancementioning

confidence: 99%

Temperature effects in metal-clad semiconductor nanolasers

Smalley

Shane

et al. 2015

Nanophotonics

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Abstract:As the field of semiconductor nanolasers becomes mature in terms of both the miniaturization to the true sub-wavelength scale, and the realization of room temperature devices, the integrated treatment of multiple design aspects beyond pure electromagnetic consideration becomes necessary to further advance the field. In this review, we focus on one such design aspect: temperature effects in nanolasers. We summarize recent efforts in understanding the interplay of various temperaturedependent parameters, and study their effects on optical mode and emission characteristics. Building on this knowledge, nanolasers with improved thermal performance can be designed, and their performance evaluated. Although this review focuses on metal-clad semiconductor lasers because of their suitability for dense chip-scale integration, these thermal considerations also apply to the broader field of nanolasers.

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Electrical and Thermal Conduction in Atomic Layer Deposition Nanobridges Down to 7 nm Thickness

Cited by 67 publications

References 31 publications

Effect of growth time on structural, morphological and electrical properties of tungsten oxide nanowire

Effect of growth time on structural, morphological and electrical properties of tungsten oxide nanowire

Highly conductive and flexible fiber for textile electronics obtained by extremely low-temperature atomic layer deposition of Pt

Temperature effects in metal-clad semiconductor nanolasers

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