Articles you may be interested inMorphology and structure evolution of tin-doped indium oxide thin films deposited by radio-frequency magnetron sputtering: The role of the sputtering atmosphere J. Appl. Phys. 115, 154905 (2014); 10.1063/1.4871810Effect of film density on electrical properties of indium tin oxide films deposited by dc magnetron reactive sputtering J.Influence of the target-substrate distance on the properties of indium tin oxide films prepared by radio frequency reactive magnetron sputtering Effect of hydrogen partial pressure on optoelectronic properties of indium tin oxide thin films deposited by radio frequency magnetron sputtering method J. Appl. Phys. 86, 974 (1999); 10.1063/1.370834 P -type transparent conducting In 2 O 3 -Ag 2 O thin films prepared by rf magnetron sputtering ITO layers with low resistivity and high visible transmittance were produced by means of middle frequency reactive dual magnetron sputtering. The influence of base pressure, Ar/O 2 ratio and magnetron pulse duration on the film composition, structure, electrical, and optical properties has been investigated. The deposition rate is proportional to the magnetron operation power at changing pulse duration and constant Ar and O 2 flows. At enhanced O 2 flows an onset of the magnetron target oxidation is discussed as a reason for the decrease of the deposition rate. The presence of water vapor in the residual gas is determined to be a reason for deterioration of resistivity and optical transmittance observed for ITO films produced at a base pressures higher than 5•10 Ϫ4 Pa. It is demonstrated that spectroscopic ellipsometry can be used as a noncontact tool to monitor the resistivity of ITO films.