Effect of deposition parameters on properties of ITO films prepared by reactive middle frequency pulsed dual magnetron sputtering

Abstract

Articles you may be interested inMorphology and structure evolution of tin-doped indium oxide thin films deposited by radio-frequency magnetron sputtering: The role of the sputtering atmosphere J. Appl. Phys. 115, 154905 (2014); 10.1063/1.4871810Effect of film density on electrical properties of indium tin oxide films deposited by dc magnetron reactive sputtering J.Influence of the target-substrate distance on the properties of indium tin oxide films prepared by radio frequency reactive magnetron sputtering Effect of hydrogen partial pressure on optoelectronic properties of indium tin oxide thin films deposited by radio frequency magnetron sputtering method J. Appl. Phys. 86, 974 (1999); 10.1063/1.370834 P -type transparent conducting In 2 O 3 -Ag 2 O thin films prepared by rf magnetron sputtering ITO layers with low resistivity and high visible transmittance were produced by means of middle frequency reactive dual magnetron sputtering. The influence of base pressure, Ar/O 2 ratio and magnetron pulse duration on the film composition, structure, electrical, and optical properties has been investigated. The deposition rate is proportional to the magnetron operation power at changing pulse duration and constant Ar and O 2 flows. At enhanced O 2 flows an onset of the magnetron target oxidation is discussed as a reason for the decrease of the deposition rate. The presence of water vapor in the residual gas is determined to be a reason for deterioration of resistivity and optical transmittance observed for ITO films produced at a base pressures higher than 5•10 Ϫ4 Pa. It is demonstrated that spectroscopic ellipsometry can be used as a noncontact tool to monitor the resistivity of ITO films.

Dependence of the properties of sputter deposited Al-doped ZnO thin films on base pressure

“…With decreasing initial base pressure, the electrical resistivity decreases whilst both the carrier concentration and the mobility increase. These results are similar to those obtained for ITO thin films deposited by magnetron sputtering [10]. The best electrical properties were obtained at 0.8 × 10 −6 Torr: of 7.3 × 10 −4 cm, n of 9.7 × 10 20 cm −3 , and of 8.82 cm 3 /Vs.…”

“…Low base pressure generally minimizes the effect of residual gases such as N 2 , O 2 , and H 2 O in the process chamber. Rogozin et al have reported that the increase in the amount of impurities with increasing the base pressures leads to a chemical reduction in the ITO thin film, resulting in the formation of non-stoichiometric structures [10]. Lee et al have reported increase in the measured lattice constant for films deposited at higher sputtering base pressures, which they attributed to the interstitial or substitution incorporation of impurities from residual gases into the lattice [11].…”

“…: +82 10 8222 7669; fax: +82 43 229 8461. applied. Previous work on ITO thin films has suggested that chamber base pressure prior to film deposition affects the resistivity of films deposited in the manner [10][11][12].…”

Real-time evolution of the indium tin oxide film properties and structure during annealing in vacuum

“…13 The post-deposition annealing of identical ITO samples was carried out at two different experimental setups, the ROssendorf Beam Line (ROBL) at the European Synchrotron Radiation Facility in Grenoble, [14] and the ITO deposition facility at Forschungszentrum Rossendorf [13]. In both cases the total pressure of the residual gas was below 6 × 10 -4 Pa. During annealing the sample was placed on a boralectric heater (Tectra, Germany).…”

Plasma flow induced local variation of dispersion constants of ITO‐films observed with spectroscopic imaging ellipsometry

“…The magnetron targets were made of high purity (99.99%) In 90% -Sn 10% alloy (Freiberger NE-Metall GmbH&Co, Germany). The deposition facility was described in detail elsewhere [4,5]. By the choice of comparable dimensions of the magnetron targets and the substrate, a strongly varying spatial distribution of the plasma parameters was intentionally obtained.…”