Electrical Breakdown in a V2O3 device at the Insulator to Metal Transition

Guénon, S.; Scharinger, S.; Wang, Siming; Ramírez, J. G; Koelle, D.; Kleiner, R.; Schuller, Ivan K.

doi:10.48550/arxiv.1210.6648

Cited by 3 publications

(7 citation statements)

References 30 publications

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“…A considerable amount of work in the previous few years has been devoted to understand this conceptually simple, and yet theoretically challenging phenomenon. Experimentally, nonlinear transport in correlated insulators has been studied in both oxides [3,4] and in organic materials [5,6]. One observes a strong non-linearity in the current-field (j-F ) characteristics, with a negative differential resistivity between weak current and large current regimes.…”

Section: Introductionmentioning

confidence: 99%

Dielectric breakdown of Mott insulators – doublon production and doublon heating

Eckstein

Werner

2013

J. Phys.: Conf. Ser.

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Using dynamical mean-field theory and the non-crossing approximation as impurity solver, we study the response of a Mott insulator to strong dc electric fields. The breakdown of the Mott insulating state is triggered by field-induced creation of doublon-hole pairs. In a previous investigation, Ref.[1], it was found that the system approaches a long-lived quasisteady state in which the current is time-independent although the number of carriers constantly increases. Here we investigate and clarify the nature of this state, which exists only because thermalization is slow in the Hubbard model at strong coupling. The current is time-independent because doublons and holes have an infinite temperature distribution. Evidence for this fact is obtained from spectral functions and by comparing the electric current with the field-induced doublon-hole creation rate. Implications to real experiments, in systems with energy dissipation, are discussed.

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Section: Introductionmentioning

confidence: 99%

Dielectric breakdown of Mott insulators – doublon production and doublon heating

Eckstein

Werner

2013

J. Phys.: Conf. Ser.

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“…1). Experimentally, such a setup has been recently explored where the correlated layer was realized by a V 2 O 3 microfilm that is coupled to Au leads [51].…”

mentioning

confidence: 99%

“…The approach illustrated here for a simple but experimentally relevant [51] model can be extended straightforwardly to a number of other physically relevant systems, including multi layer semiconducting heterostructures, ultracold atoms and correlated coupled-cavity arrays featuring driving and dissipation, molecular contacts, and can be used to study nonequilibrium quantum phase transitions in these systems. Extension to a nonlocal self energy, as in cluster DMFT, or in nonequilibrium variational/perturbative cluster approaches [71][72][73] is also an interesting development.…”

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confidence: 99%

Nonequilibrium Dynamical Mean-Field Theory: An Auxiliary Quantum Master Equation Approach

2013

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We introduce a versatile method to compute electronic steady-state properties of strongly correlated extended quantum systems out of equilibrium. The approach is based on dynamical mean-field theory (DMFT), in which the original system is mapped onto an auxiliary nonequilibrium impurity problem imbedded in a Markovian environment. The steady-state Green's function of the auxiliary system is solved by full diagonalization of the corresponding Lindblad equation. The approach can be regarded as the nontrivial extension of the exact-diagonalization-based DMFT to the nonequilibrium case. As a first application, we consider an interacting Hubbard layer attached to two metallic leads and present results for the steady-state current and the nonequilibrium density of states.

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“…When an imaging scan is repeated at the same current, the images look more or less the same but additional bright spots appear at different positions. By estimating the conductance change caused by a local temperature distribution in the device, one can show that ∆V is proportional to the temperature derivative of the conductivity close to the electron probe dg dT (supplement section in [15]). Because dg dT in the insulating phase is several orders of magnitude smaller than in the metallic phase, a large response ∆V is predominately caused by the metallic domains.…”

mentioning

confidence: 99%

“…In order to investigate how the IMT at the nanoscale are influencing the electrical breakdown, we have developed a numerical model (similar to the one used in [16]), in which we represent domains with different IMT temperatures by a 20 × 400 resistor network (supplement section in [15]). We also included thermal coupling between the nearest neighbors of the resistor network and to the heat sink.…”

mentioning

confidence: 99%

Electrical breakdown in a V ₂ O ₃ device at the insulator-to-metal transition

Guénon¹,

Scharinger²,

Wang³

et al. 2013

EPL

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We have measured the electrical properties of a V2O3 thin film micro bridge at the insulator-metal transition (IMT). Discontinuous jumps to lower voltages in the current voltage characteristic (IV) followed by an approximately constant voltage progression for high currents indicate an electrical breakdown of the device. In addition, the IV curve shows hysteresis and a training effect, i.e., the subsequent IV loops are different from the first IV loop after thermal cycling. Low-temperature scanning electron microscopy (LTSEM) reveals that the electrical breakdown over the whole device is caused by the formation of electro-thermal domains (ETDs), i.e., the current and temperature redistribution in the device. On the contrary, at the nanoscale, the electrical breakdown causes the IMT of individual domains. In a numerical model we considered these domains as a network of resistors and we were able to reproduce the electro-thermal breakdown as well as the hysteresis and the training effect in the IVs.

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Electrical Breakdown in a V2O3 device at the Insulator to Metal Transition

Cited by 3 publications

References 30 publications

Dielectric breakdown of Mott insulators – doublon production and doublon heating

Dielectric breakdown of Mott insulators – doublon production and doublon heating

Nonequilibrium Dynamical Mean-Field Theory: An Auxiliary Quantum Master Equation Approach

Electrical breakdown in a V ₂ O ₃ device at the insulator-to-metal transition

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Electrical Breakdown in a V2O3 device at the Insulator to Metal Transition

Cited by 3 publications

References 30 publications

Dielectric breakdown of Mott insulators – doublon production and doublon heating

Dielectric breakdown of Mott insulators – doublon production and doublon heating

Nonequilibrium Dynamical Mean-Field Theory: An Auxiliary Quantum Master Equation Approach