Electrical Breakdown in Thin Gate and Tunneling Oxides

Chen, Ih-Chin; Holland, S.; Hu, Chenming

doi:10.1109/jssc.1985.1052311

Cited by 90 publications

(12 citation statements)

References 32 publications

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“…168 Analogous to other electrically insulating materials, SSE systems are expected to have a fundamental material limit at which electrical failure will occur. [169][170][171] This could be through dielectric breakdown, electric field concentration due to rapid metal depletion at the interface, 162 mechanical flow of metal within existing defects developing increasing pressure, 172,173 or otherwise. Aguesse et al have touched on key issues in a study on the origin of dendritic failure in Ga-doped LLZO; 34 highlighting the critical role of defects as a potential root cause for dendritic behavior and similarities to work in Na + systems exhibiting similar failure modes.…”

Section: The Opportunity Cost Of a LI Metal Anode-gravimetric Energy ...mentioning

confidence: 99%

Review—Practical Challenges Hindering the Development of Solid State Li Ion Batteries

Kerman

Luntz

Viswanathan

et al. 2017

J. Electrochem. Soc.

605

471

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Solid state electrolyte systems boasting Li + conductivity of >10 mS cm −1 at room temperature have opened the potential for developing a solid state battery with power and energy densities that are competitive with conventional liquid electrolyte systems. The primary focus of this review is twofold. First, differences in Li penetration resistance in solid state systems are discussed, and kinetic limitations of the solid state interface are highlighted. Second, technological challenges associated with processing such systems in relevant form factors are elucidated, and architectures needed for cell level devices in the context of product development are reviewed. Specific research vectors that provide high value to advancing solid state batteries are outlined and discussed. Solid state battery systems are of great interest because of potential benefits in gravimetric and volumetric energy density, operable temperature range, and safety in comparison to traditional liquid electrolyte based systems. However, unresolved fundamental issues remain in the quest to fully understand the behavior of all-solid batteries, especially in the area of electrochemical interfaces.1 There are also a number of significant engineering challenges that require methodical effort to enable a tangible product. Some transitions from academic laboratories to entrepreneurial efforts attempting to overcome these challenges remain unsuccessful in efforts to bring a product to the market.2,3 Vital parameters that require robust understanding from a product development standpoint are material cost, cell lifetime and shelf life, cell energy density on a volumetric and gravimetric basis, operable capabilities for given temperature conditions, and safety. The advantage of energy density remains to be realized in solid state electrolytes (SSEs) since most studies to date utilize thick SSEs or cathodes with low active loading compared to liquid counterparts. 4,5 Furthermore, the desire to use SSEs in conjunction with Li metal anodes requires understanding and managing the morphology of Li metal plating, which can impact volumetric energy density. Operation at both higher and lower temperature compared to conventional technologies is a significant potential advantage of SSE systems. However, reports of solid state cells achieving parity with traditional systems at room temperature or any other temperature do not currently exist. The safety, specifically decreased flammability, of SSE systems is another potential advantage but requires ongoing validation and study.6 Unlike current liquid electrolyte systems, 7 the manufacturability and material component costs of SSEs have not been well characterized, and thus the value of these features will need to be weighed accordingly with any added cost. Operating lifetime of SSEs capturing intrinsic materials parameters such as voltage stability, 8 as well as catastrophic failure modes such as shorting, 9 have been briefly investigated, but in the absence of high energy density electrode formulations and appli...

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Section: The Opportunity Cost Of a LI Metal Anode-gravimetric Energy ...mentioning

confidence: 99%

Review—Practical Challenges Hindering the Development of Solid State Li Ion Batteries

Kerman

Luntz

Viswanathan

et al. 2017

J. Electrochem. Soc.

605

471

View full text Add to dashboard Cite

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“…6(a), the slopes for damaged samples become steeper than that of the reference; that is, the electrontrapping rate for the damaged samples increases. The time course of leakage current is derived from the electrontrapping behavior 22,23) as…”

Section: Electron-trapping Rate Changes Induced By Pidmentioning

confidence: 99%

“…37) Once the electrontrapping rate is determined, the time-to-final breakdown can be predicted on the basis of the cumulative defect model. 23,31) One can implement this methodology in the interlayer dielectric reliability analysis and in the design of low-damage plasma processes.…”

Section: Electron-trapping Rate Changes Induced By Pidmentioning

confidence: 99%

“…Recently, a C-V method for detecting trapped charges in dielectrics has been proposed 20) for assessing the parameters related to circuit delay and time-dependent dielectric breakdown (TDDB) behavior. 7,[21][22][23][24][25][26][27] The TDDB lifetime degradation has been studied extensively in accordance with the introduction of low-k materials. [27][28][29] Suzumura et al investigated various TDDB lifetimes with regard to the device structures, i.e., Lateral TDDB and Vertical TDDB.…”

Section: Introductionmentioning

confidence: 99%

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Time-dependent dielectric breakdown characterizations of interlayer dielectric damage induced during plasma processing

Shinohara¹,

Nishida²,

Ono³

et al. 2017

Jpn. J. Appl. Phys.

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We proposed an electrical evaluation method on the basis of leakage current-stress time (I-t) measurement for plasma-induced damage (PID) in interlayer dielectric films. The I-t measurement, which is widely used for the time-dependent dielectric breakdown (TDDB) test is applied to the evaluation of PID in thick SiO 2 films. We focus on the electron trapping process during the TDDB test. The initial stage of time evolution of leakage current is monitored, and compared among the samples damaged under various plasma conditions. It was found that the initial electron trapping rate depends on the amount of damage, i.e., the rate increases with increasing in process time (t pr ) and dc self-bias voltage (V dc ). The proposed technique can be used to assess the reliability degradation of interlayer dielectric films caused by PID.

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“…Moreover, with the severe scaling of device dimensions towards nanoscale lengths, a method to measure the electrostatic force field in the nanometer range is needed. This would help in protecting it from the breakdown electric field limit [3] in the design of very large scale integrated (VLSI) circuits. 1 Author to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

Dynamic electrostatic force microscopy technique for the study of electrical properties with improved spatial resolution

Maragliano¹,

Heskes²,

Stefancich³

et al. 2013

Nanotechnology

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The need to resolve the electrical properties of confined structures (CNTs, quantum dots, nanorods, etc) is becoming increasingly important in the field of electronic and optoelectronic devices. Here we propose an approach based on amplitude modulated electrostatic force microscopy to obtain measurements at small tip-sample distances, where highly nonlinear forces are present. We discuss how this improves the lateral resolution of the technique and allows probing of the electrical and surface properties. The complete force field at different tip biases is employed to derive the local work function difference. Then, by appropriately biasing the tip-sample system, short-range forces are reconstructed. The short-range component is then separated from the generic tip-sample force in order to recover the pure electrostatic contribution. This data can be employed to derive the tip-sample capacitance curve and the sample dielectric constant. After presenting a theoretical model that justifies the need for probing the electrical properties of the sample in the vicinity of the surface, the methodology is presented in detail and verified experimentally.

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Electrical Breakdown in Thin Gate and Tunneling Oxides

Cited by 90 publications

References 32 publications

Review—Practical Challenges Hindering the Development of Solid State Li Ion Batteries

Review—Practical Challenges Hindering the Development of Solid State Li Ion Batteries

Time-dependent dielectric breakdown characterizations of interlayer dielectric damage induced during plasma processing

Dynamic electrostatic force microscopy technique for the study of electrical properties with improved spatial resolution

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