Electrical characterisation of thin silicon layers by light beam induced current and internal quantum efficiency measurements

Sayad, Yassine; Amtablian, S.; Kaminski, A.; Blanc, D.; Carroy, P.; Nouiri, A.; Lemiti, M.

doi:10.1016/j.mseb.2009.04.007

Cited by 5 publications

(4 citation statements)

References 15 publications

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“…3, the diffusion length was respectively 34 µm for the thin epitaxial silicon, 32 µm for the metallurgic grade and 34 µm for the sintered silicon. These results are in reasonably good agreement with values measured by Spectral Response (SR) and Light Beam Induced Current (LBIC) [13]. As expected, the model could not be applied to the FZ sample because of its high diffusion length.…”

Section: Theoretical Approachsupporting

confidence: 86%

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Diffusion length determination in solar grade silicon by room temperature photoluminescence measurements

Sayad

Blanc

Kaminski

et al. 2010

Phys. Status Solidi (c)

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The coordination geometries of the aqua ions of AmIII and CmIII are strikingly similar to those of the highly symmetric nona‐hydrated species in their triflate salts [M(H2O)9](CF3SO3)3. These findings are supported by single‐crystal X‐ray diffraction, EXAFS, and optical spectroscopy and are discussed by P. Lindqvist‐Reis and co‐workers in their Communication on page 919ff. The picture shows the characteristic orange luminescence from CmIII in aqueous solution and in the triflate salt, together with the molecular structure of the salt.

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Section: Theoretical Approachsupporting

confidence: 86%

“…A high quality FZ monocrystalline wafer was used as a reference. An epitaxial silicon layer with a thickness of 50μm was deposited on a highly doped substrate [13]. Multicrystalline purified metallurgical silicon and multicrystalline silicon elaborated by sintering of silicon powder were also used in this study.…”

Section: Theoretical Approachmentioning

confidence: 99%

Diffusion length determination in solar grade silicon by room temperature photoluminescence measurements

Sayad

Blanc

Kaminski

et al. 2010

Phys. Status Solidi (c)

Self Cite

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“…The J SC of GNWs-Planar solar cell is only 21.2 mA/cm 2 , while the J SC of GNWs-MP solar cell could be enhanced to 28.7 mA/cm 2 , implying the remarkable light absorption effect for the GNWs-MP solar cell. The external quantum efficiency (EQE) reflects the cells’ capacity to capture incident photons into electricity.The EQE is defined as EQE = I ph (λ)· hc / P in (λ) e λ, where I ph (λ) is the photocurrent; P in (λ) is the incident light power as a function of wavelength λ; h , c , and e is the Planck’s constant, speed of light in vacuum, and elementary charge, respectively . The GNWs-Planar Si solar cell shows a EQE of 50–60% in the range of 500–900 nm, while the EQE of the GNWs-MP solar cell is larger and almost reaches 70% in the same range shown in Figure b, indicating the more efficient utilization of incident light for the GNWs-MP solar cell.…”

Section: Resultsmentioning

confidence: 99%

Composite Transparent Electrode of Graphene Nanowalls and Silver Nanowires on Micropyramidal Si for High-Efficiency Schottky Junction Solar Cells

Jiao

Liu

Wei

et al. 2015

ACS Appl. Mater. Interfaces

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The conventional graphene-silicon Schottky junction solar cell inevitably involves the graphene growth and transfer process, which results in complicated technology, loss of quality of the graphene, extra cost, and environmental unfriendliness. Moreover, the conventional transfer method is not well suited to conformationally coat graphene on a three-dimensional (3D) silicon surface. Thus, worse interfacial conditions are inevitable. In this work, we directly grow graphene nanowalls (GNWs) onto the micropyramidal silicon (MP) by the plasma-enhanced chemical vapor deposition method. By controlling growth time, the cell exhibits optimal pristine photovoltaic performance of 3.8%. Furthermore, we improve the conductivity of the GNW electrode by introducing the silver nanowire (AgNW) network, which could achieve lower sheet resistance. An efficiency of 6.6% has been obtained for the AgNWs-GNWs-MP solar cell without any chemical doping. Meanwhile, the cell exhibits excellent stability exposed to air. Our studies show a promising way to develop simple-technology, low-cost, high-efficiency, and stable Schottky junction solar cells.

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“…The spectral response of a solar cell is given by SR(λ) = I sc (λ)/P in (λ), where I sc is the short-circuit current generated and P in is the illumination incident power as a function of wavelength λ [1]. Using a calibrated cell one can obtain the external quantum efficiency (EQE) as EQE(λ) = SR(λ).…”

Section: Introductionmentioning

confidence: 99%

Estimation of external quantum efficiency for multi-junction solar cells under influence of charged particles using artificial neural networks

Patra

Jiang

Maskell

2011

2011 IEEE International Conference on Systems, Man, and Cybernetics

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External quantum efficiency (EQE) of a solar cell is an important parameter as it determines the design efficiency and overall conversion efficiency. The EQE of solar cells for space applications is adversely affected due to bombardment of charged particles in space. Numerical model based softwares, e.g., PC1D, can be used to estimate the EQE under such situation. By varying the cell parameters to fit the measured EQE one can obtain degradation performance of space solar cells. However, due to complex phenomena and interactions occurring between the junctions of the solar cells and the nonlinear influence of charged particles, the accuracy of these models may be limited. In this paper we propose an artificial neural network (ANN)-based model to estimate the EQE performance of triple junction InGaP/GaAs/Ge solar cells under the influence of wide range of charged particles. With extensive simulation results we have shown that the ANN-based models provide better estimate of the EQE in terms of mean square error and correlation coefficient than the results reported by Sato et al.Index Terms-Multi-junction solar cells, external quantum efficiency, artificial neural networks, solar cell model.

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Electrical characterisation of thin silicon layers by light beam induced current and internal quantum efficiency measurements

Cited by 5 publications

References 15 publications

Diffusion length determination in solar grade silicon by room temperature photoluminescence measurements

Diffusion length determination in solar grade silicon by room temperature photoluminescence measurements

Composite Transparent Electrode of Graphene Nanowalls and Silver Nanowires on Micropyramidal Si for High-Efficiency Schottky Junction Solar Cells

Estimation of external quantum efficiency for multi-junction solar cells under influence of charged particles using artificial neural networks

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