2019
DOI: 10.1016/j.jmst.2018.11.020
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Electrical characteristics and detailed interfacial structures of Ag/Ni metallization on polycrystalline thermoelectric SnSe

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Cited by 18 publications
(6 citation statements)
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“…Ag/Ni bilayer and Ag/Co/Ti multi-layer were developed as diffusion barriers [93,186]. For example, no secondary phases and no cracks were observed between the Ag/Co/Ti multi-layer and the SnSe interface [186]. Moreover, the specific contact resistance between the Ag/Co/Ti multi-layer and the SnSe was observed to be approximately 1.53 mΩ cm 2 at room temperature.…”
Section: (E) Other Modulesmentioning
confidence: 97%
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“…Ag/Ni bilayer and Ag/Co/Ti multi-layer were developed as diffusion barriers [93,186]. For example, no secondary phases and no cracks were observed between the Ag/Co/Ti multi-layer and the SnSe interface [186]. Moreover, the specific contact resistance between the Ag/Co/Ti multi-layer and the SnSe was observed to be approximately 1.53 mΩ cm 2 at room temperature.…”
Section: (E) Other Modulesmentioning
confidence: 97%
“…The fabrication of a module based on polycrystalline SnSe has just begun. Ag/Ni bilayer and Ag/Co/Ti multi-layer were developed as diffusion barriers [93,186]. For example, no secondary phases and no cracks were observed between the Ag/Co/Ti multi-layer and the SnSe interface [186].…”
Section: (E) Other Modulesmentioning
confidence: 99%
“…Table summaries the design methods and performance of state-of-the-art conventional thermoelectric modules with both double-leg and single-leg types (refs , , , , , , , , , , , , , , and ), including ZT max and temperatures for both p-type and n-type legs, types of electrodes and designed interlayers for both hot and cold sides, selected substrates, and achieved P , η, and Δ T . Currently, the conventional devices are mostly based on Bi 2 Te 3 and Sb 2 Te 3 for low-temperature usages, PbTe and skutterudites for medium-temperature usages, and half-Heuslers for high-temperature usages.…”
Section: Device Designmentioning
confidence: 99%
“…7,9 A good diffusion barrier material for the TE joints generally needs to meet the following requirements: 6,7,9 matched coefficient of thermal expansion (CTE), high contact electrical and thermal conductivity, stabilized interdiffusion behaviors, high bonding strength, and excellent thermal and chemical stability. Therefore, metals and alloys are usually taken as diffusion barrier materials and electrodes for the TE joints, 6,7,9 such as Ni for SnSe 10 and Zn 4 Sb 3 , 11 Sn for GeTe, 12 Au for Cu 26 Nb 2 Ge 6 S 32 , 13 Cu for Mg 2 Si, 14 and PbTe, 15 Ti for Bi 2 Te 3 16 and CoSb 3 , 17 Nb for CoSb 3 , 18 Mo for NbFeSb, 19 AgNi alloy for NbFeSb, 20 Co−P for Bi 2 Te 3 , 21 and TiB 2 −Si 3 N 4 alloy for SiGe. 22 CoSb 3 -based filled skutterudites are considered as one kind of the most promising mid-temperature TE materials not only due to their good TE performance but also due to their low cost, high mechanical strength, and high thermal stability.…”
Section: Introductionmentioning
confidence: 99%
“…Diffusion barrier layers between TE materials and electrodes are usually introduced to solve these interfacial problems. , A good diffusion barrier material for the TE joints generally needs to meet the following requirements: ,, matched coefficient of thermal expansion (CTE), high contact electrical and thermal conductivity, stabilized interdiffusion behaviors, high bonding strength, and excellent thermal and chemical stability. Therefore, metals and alloys are usually taken as diffusion barrier materials and electrodes for the TE joints, ,, such as Ni for SnSe and Zn 4 Sb 3 , Sn for GeTe, Au for Cu 26 Nb 2 Ge 6 S 32 , Cu for Mg 2 Si, Fe for GeTe and PbTe, Ti for Bi 2 Te 3 and CoSb 3 , Nb for CoSb 3 , Mo for NbFeSb, AgNi alloy for NbFeSb, Co–P for Bi 2 Te 3 , and TiB 2 –Si 3 N 4 alloy for SiGe …”
Section: Introductionmentioning
confidence: 99%