2023
DOI: 10.1039/d2tc04491a
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Electrical characteristics and photodetection mechanism of TiO2/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction

Abstract: The recent research focus on wide-bandgap and two-dimensional materials with a Schottky junction has provided a new concept for ultraviolet photodetectors. However, the working mechanism of the Schottky junction-based detector...

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Cited by 5 publications
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“…Several materials, such as GaN, ZnO, Cr 2 O 3 , and TiO 2 , have been utilized as base material for photodetector applications. This is due to their unique characteristics, i.e., wide-band-gap value [8]. In particular, chromia oxide (Cr 2 O 3 ) attracted a lot of interest [9] as a wide-band-gap material (E g ~3 eV).…”
Section: Introductionmentioning
confidence: 99%
“…Several materials, such as GaN, ZnO, Cr 2 O 3 , and TiO 2 , have been utilized as base material for photodetector applications. This is due to their unique characteristics, i.e., wide-band-gap value [8]. In particular, chromia oxide (Cr 2 O 3 ) attracted a lot of interest [9] as a wide-band-gap material (E g ~3 eV).…”
Section: Introductionmentioning
confidence: 99%