Electrical characteristics and thermally induced metastability in an amorphous-silicon ambipolar transistor

A new approach is presented to resolve bias-induced metastability mechanisms in hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs). The post stress relaxation of threshold voltage (VT) was employed to quantitatively distinguish between the charge trapping process in gate dielectric and defect state creation in active layer of transistor. The kinetics of the charge de-trapping from the SiN traps is analytically modeled and a Gaussian distribution of gap states is extracted for the SiN. Indeed, the relaxation in VT is in good agreement with the theory underlying the kinetics of charge de-trapping from gate dielectric. For the TFTs used in this work, the charge trapping in the SiN gate dielectric is shown to be the dominant metastability mechanism even at bias stress levels as low as 10 V.

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Metastability mechanisms in thin film transistors quantitatively resolved using post-stress relaxation of threshold voltage

Fomani

Nathan

2011

Journal of Applied Physics

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Stability of hydrogenated amorphous silicon TFT driver

Bae

Choi

et al. 2005

Journal of Information Display

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Electrical characteristics and thermally induced metastability in an amorphous-silicon ambipolar transistor

Cited by 2 publications

References 22 publications

Metastability mechanisms in thin film transistors quantitatively resolved using post-stress relaxation of threshold voltage

Metastability mechanisms in thin film transistors quantitatively resolved using post-stress relaxation of threshold voltage

Stability of hydrogenated amorphous silicon TFT driver

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