Electrical characteristics of an optically controlled N-channel AlGaAs/GaAs/InGaAs pseudomorphic HEMT

Kim, Dong Myong; Song, Sung-Hyuk; Kim, Hwe Jong; Kang, K. N.

doi:10.1109/55.740656

Cited by 13 publications

(2 citation statements)

References 8 publications

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“…Since a large conduction band discontinuity at an AlGaAs/InGaAs heterojunction interface produces high two-dimensional electron gas (2DEG) densities in an InGaAs channel, a pHEMT provides a very high electron mobility without inducing electrons scattering, resulting in a high-frequency performance. 11,12) In this study, we develop a phototransistor from a pHEMT with an AlGaAs/InGaAs dual heterojunction and an undoped GaAs graded buffer in an MMIC chip. This chip can be used as not only a highspeed transistor, but also an optoelectronic mixer for performing photodetection and frequency up-convertion simultaneously.…”

Section: Introductionmentioning

confidence: 99%

Optoelectronic Mixing Phototransistor for Ultrawide-Band Fiber-Radio Systems

Lin¹,

Lai²

2006

jjap

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High quality hetero-epitaxial CeO 2 films are grown on MgO substrates using BaSnO 3 buffer layers. CeO 2 films and BaSnO 3 buffer layers are grown by a pulsed laser deposition method. It is found that the crystallinity of the CeO 2 films directly grown on MgO substrates is quite poor. However when we grow CeO 2 films on MgO substrates with a BaSnO 3 buffer layer, the crystallinity of CeO 2 films is improved from that of the directly grown CeO 2 films. Also the estimated in-plane crystallinity () of the CeO 2 films on the BaSnO 3 buffer layers is much improved by the introduction of the buffer layers. One of the reasons for high quality CeO 2 films are grown on MgO substrates by the introduction of BaSnO 3 buffer layers is the lattice matching between the CeO 2 films and the MgO substrates. The CeO 2 films grow in a 45 rotated mode to the BaSnO 3 buffered MgO substrates, then the lattice mismatch between the sublattice of the CeO 2 films and the MgO substrates is calculated to be 9.3%, while that of the CeO 2 films on MgO substrates in a cube on cube mode is over 25%.

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Section: Introductionmentioning

confidence: 99%

Optoelectronic Mixing Phototransistor for Ultrawide-Band Fiber-Radio Systems

Lin¹,

Lai²

2006

jjap

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“…The semiconductor consisted of doped nanoribbons of single crystalline silicon, transfer printed onto a carrier wafer coated with a bilayer of poly͑methyl methacrylate͒ ͑PMMA͒ ͑MicroChem, USA͒ and polyimide ͑PI͒ ͑Sigma Aldrich, USA͒ having thicknesses of 100 nm and 1.2 m. The CMOS inverters were fabricated by using procedures related to those reported recently. 2,3 Spin coating the resulting circuits with a PI layer ͑ϳ1.2 m͒ positioned the circuit layers near the neutral mechanical plane of the composite structure. Next, reactive ion etching through patterned etch masks removed regions of the PI encapsulant, substrate, and underlying PMMA layer, to isolate the interconnects, to define structural bridges and to create a periodic array of circular openings.…”

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confidence: 99%

Complementary metal oxide silicon integrated circuits incorporating monolithically integrated stretchable wavy interconnects

Kim

Choi

Ahn

et al. 2008

Applied Physics Letters

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Stretchable complementary metal oxide silicon circuits consisting of ultrathin active devices mechanically and electrically connected by narrow metal lines and polymer bridging structures are presented. This layout—together with designs that locate the neutral mechanical plane near the critical circuit layers—yields strain independent electrical performance and realistic paths to circuit integration. A typical implementation reduces the strain in the silicon to less than ∼0.04% for applied strains of ∼10%. Mechanical and electrical modeling and experimental characterization reveal the underlying physics of these systems.

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Conductivity, Hall and magnetoresistance effect measurements on SI GaAs and InP

Acar¹,

Kasap

2004

phys. stat. sol. (a)

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The conductivity, Hall effect and magnetoresistance quantities in semi‐insulating undoped GaAs and Fe‐doped GaAs and InP grown by the LEC technique have been measured in the temperature range 300–420 K. It is shown that mixed conductivity is present in all samples. The experimental data were analyzed using a two‐band model including electron and hole transport. A good fit has been obtained self‐consistently to both conductivity and mobility. The single‐band parameters have been extracted from the measured data in the studied temperature range. From ln (|RH, 0| T3/2) and σ vs T−1 plots, activation energies of 0.77 and 0.65 eV have also been observed for GaAs and InP, respectively. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Electrical characteristics of an optically controlled N-channel AlGaAs/GaAs/InGaAs pseudomorphic HEMT

Cited by 13 publications

References 8 publications

Optoelectronic Mixing Phototransistor for Ultrawide-Band Fiber-Radio Systems

Optoelectronic Mixing Phototransistor for Ultrawide-Band Fiber-Radio Systems

Complementary metal oxide silicon integrated circuits incorporating monolithically integrated stretchable wavy interconnects

Conductivity, Hall and magnetoresistance effect measurements on SI GaAs and InP

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