Conductivity, Hall and magnetoresistance effect measurements on SI GaAs and InP

Abstract

The conductivity, Hall effect and magnetoresistance quantities in semi‐insulating undoped GaAs and Fe‐doped GaAs and InP grown by the LEC technique have been measured in the temperature range 300–420 K. It is shown that mixed conductivity is present in all samples. The experimental data were analyzed using a two‐band model including electron and hole transport. A good fit has been obtained self‐consistently to both conductivity and mobility. The single‐band parameters have been extracted from the measured data in the studied temperature range. From ln (|RH, 0| T3/2) and σ vs T−1 plots, activation energies of 0.77 and 0.65 eV have also been observed for GaAs and InP, respectively. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)