Quantitative Mobility Spectrum Analysis for Determination of Electron and Magneto Transport Properties of Te-Doped GaSb

Acar, Selim; Kasap, M.; Isik, B. Y; Özçelik, Süleyman; Tuğluoğlu, Nihat; Karadeniz, S.

doi:10.1088/0256-307x/22/9/062

Cited by 3 publications

(5 citation statements)

References 19 publications

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“…The QMSA technique were described and improved in a number of papers [5][6][7][8][9]. Variable field Hall effect measurements in conjunction with the QMSA technique [10][11][12]…”

Section: Introductionmentioning

confidence: 99%

Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition

et al. 2008

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Cataloged from PDF version of article.Resistivity and Hall effect measurements on nominally undoped Al0.25Ga0.75N/GaN/AlN heterostructures grown on sapphire substrates prepared by metal organic chemical vapor deposition have been carried out as a function of temperature (20-300 K) and magnetic field (0-1.4 T). Variable magnetic field Hall data have been analyzed using the improved quantitative mobility spectrum analysis technique. The mobility and density of the two-dimensional electron gas at the AlGaN/GaN interface and the two-dimensional hole gas at the GaN/AIN interface are separated by quantitative mobility spectrum analysis. The analysis shows that two-channel conduction is present in nominally undoped Al0.25Ga0.75N/GaN/AlN heterostructures grown on sapphire substrate. (c) 2007 Elsevier B.V All rights reserved

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“…The QMSA technique were described and improved in a number of papers [5][6][7][8][9]. Variable field Hall effect measurements in conjunction with the QMSA technique [10][11][12]…”

Section: Introductionmentioning

confidence: 99%

Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition

et al. 2008

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“…In a number of papers, the QMSA technique has been used in determining individual carrier densities and mobilities in semiconductor materials, including bulk samples, thin films, quantum wells, and multilayer device structures. [13][14][15][16] The samples investigated in this work were grown on c-plane ͑0001͒ sapphire ͑Al 2 O 3 ͒ substrate in a low-pressure MOCVD reactor. The details of the samples are given elsewhere.…”

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confidence: 99%

Electronic transport characterization of AlGaN∕GaN heterostructures using quantitative mobility spectrum analysis

Li̇şesi̇vdi̇n

Yıldız

Acar

et al. 2007

Applied Physics Letters

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Resistivity and Hall effect measurements in nominally undoped Al 0.25 Ga 0.75 N / GaN heterostructures grown on sapphire substrate by metal-organic chemical vapor deposition are carried out as a function of temperature ͑20-350 K͒ and magnetic field ͑0-1.5 T͒. The measurement results are analyzed using the quantitative mobility spectrum analysis techniques. It is found that there is strong two-dimensional electron gas localization below 100 K, while the thermally activated minority carriers with the activation energies of ϳ58 and ϳ218 meV contribute to the electron transport at high temperatures.

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“…The occurrence of the second peak is attributed by Acar et al to the population of the L conduction band with electrons, due to its small energy separation (≈ 75 meV) from the Γ band. Considering that the ratio of electron mobilities in the L and Γ bands, μ μ Γ , L is about 0.1 [37], it is possible that the L band conduction occurs at a lower mobility range that is outside of the plots presented in [25], and that both peaks result from conduction in only the Γ band. A particularly interesting report published recently by Brown et al [27] studied the mobility spectrum of nondegenerate molecular beam epitaxy- grown n-type Hg −x 1 Cd x Te epilayers.…”

Section: Resultsmentioning

confidence: 99%

“…An earlier work by Achard et al [10], which studied the mobility spectrum of InP epilayers using an older mobility spectrum algorithm, reported only a single mobility peak at higher temperatures. Acar et al [25] reported on the measured mobility spectrum of bulk GaSb, indicating the possibility that LO phonon scattering resulted in two peaks in the mobility spectrum. For higher temperatures, the mobility spectrum splits into two peaks that are closely spaced in mobility.…”

Section: Resultsmentioning

confidence: 99%

“…Further developments by several research groups led to what is known as mobility spectrum analysis (MSA), in which the generated spectra are optimized to quantitatively agree with the experimentally derived magnetic field-dependent Hall and resistivity results [2][3][4][5][6][7]. Recently, MSA has been utilized to study carrier transport in a variety of semiconductor nanostructures and devices [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27].…”

Section: Introductionmentioning

confidence: 99%

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Intrinsic broadening of the mobility spectrum of bulk n-type GaAs

et al. 2014

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Modern devices consisting of multiple semiconductor layers often result in the population of numerous distinct carrier species. Conventional Hall measurements at a single-magnetic-field strength provide only a weighted average of the electron mobility and carrier concentration of a semiconductor structure and, therefore, are of limited use for the extraction of carrier transport information. In recent years, mobility spectrum analysis techniques, which have been developed to extract a mobility spectrum from magnetic field-dependent conductivitytensor measurements, have been applied in the analysis of carrier conductivity mechanisms of numerous semiconductor structures and devices. Currently there is a severe lack of reported studies on theoretical calculations of the mobility distribution of semiconductor structures or devices. In addition, the majority of reports on experimental mobility spectrum analysis are of complex, multi layered structures such as type-II superlattices, and the interpretation of the mobility spectra has been difficult. Therefore, a good understanding of the mobility spectrum has yet to be developed. For example, it is often assumed that distinct peaks of a mobility spectrum result from fundamentally different conduction mechanisms such as the bulk and surface conduction of narrow-bandgap semiconductors. In this article, we present calculations of the electron mobility distribution of bulk GaAs, which predict the existence of multiple Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. mobility spectrum peaks that result from electron conductivity in the Γ conduction band. This report serves as an important and simple test case upon which experimentally measured mobility spectra can be compared. It also presents insight into the general nature of electron mobility distributions.

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Quantitative Mobility Spectrum Analysis for Determination of Electron and Magneto Transport Properties of Te-Doped GaSb

Cited by 3 publications

References 19 publications

Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition

Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition

Electronic transport characterization of AlGaN∕GaN heterostructures using quantitative mobility spectrum analysis

Intrinsic broadening of the mobility spectrum of bulk n-type GaAs

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