Optically induced trap-recharging waves in InP:Fe at the condition of interband carrier excitation have been studied and the magnitudes of the effective trap concentration N eff and the product of mobility and lifetime of the charge carriers have been determined. It is shown that the results obtained can be interpreted in the framework of a monopolar model under the condition that interband illumination reduces dramatically the effective trap concentration as well as the carrier lifetime. Such a decrease results in a strong wave damping, so the waves under study are damped forced waves rather than eigenmodes of the material. A brief introduction into the theory describing a reduction in the effective trap concentration is presented.

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Space-charge waves (trap recharging waves) and the effect of spatial rectification of space-charge waves have been investigated in single crystals of 4H-SiC polytype. The relevant experimental dependencies have been found to be in quite good quantitative agreement with the theory of space-charge waves. The following parameters of the samples studied were determined: μτ=(7.4±0.8)×10−7cm2∕V, τM=(5.3±0.6)×10−4s, and Neff=(5±1)×1013cm−3.