Space-charge waves in silicon carbide

Abstract

Space-charge waves (trap recharging waves) and the effect of spatial rectification of space-charge waves have been investigated in single crystals of 4H-SiC polytype. The relevant experimental dependencies have been found to be in quite good quantitative agreement with the theory of space-charge waves. The following parameters of the samples studied were determined: μτ=(7.4±0.8)×10−7cm2∕V, τM=(5.3±0.6)×10−4s, and Neff=(5±1)×1013cm−3.

Non-steady-state photoelectromotive force in SiC crystals irradiated by reactor neutrons

“…Owing to the high thermal, chemical, and radiation resistances, silicon carbide has been used in the fabrication of ionizing radiation detectors [27][28][29][30]. The investigation of trap recharging space charge waves excited in a direct cur rent (dc) electric field was performed in undoped and unirradiated silicon carbide crystals [31,32]. In this work, the SiC crystals preliminarily irradiated by reac tor neutrons have been studied using nonresonant techniques for exciting a non steady state photoelec tromotive force.…”

Space Charge Waves in 6H-SiC and 4H-SiC

“…Some of them are known as trap recharging waves (TRW) [1]. In recent years, TRW studies performed with photorefractive crystals of the sillenite family [2,3] were extended to classical highly resistive semiconductors like InP:Fe [4], CdTe:Ge [5], and hexagonal silicon carbide (SiC) [6].…”

“…Detailed information about the principles of optical SCW excitation can be found in Refs. [2,6]. The interaction of a running space-charge wave with the static periodical electric field formed by the static space-charge grating gives rise to spatial rectification and an alternating current which can be detected in an outside electric circuit ( Fig.…”