Electrical characteristics of Au/Ni Schottky diodes on cleaved m-plane surfaces of free-standing n-GaN substrates

Naganawa, Moe; Aoki, Toshichika; Mishima, Tomoyoshi; Shiojima, Kenji

doi:10.7567/jjap.55.04eg06

Cited by 19 publications

(15 citation statements)

References 28 publications

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“…The calculated SBD properties reported in Table 1, f B (I-V) are similar to the values previously reported in Ref. [12], which investigated an m-plane SBD directly fabricated onto an m-plane substrate. However, f B (C-V) are different from the values in Ref.…”

Section: Resultssupporting

confidence: 85%

“…However, f B (C-V) are different from the values in Ref. [12]. This result indicates that our samples have in-plane distribution of electric characteristics.…”

Section: Resultscontrasting

confidence: 81%

“…It is necessary to fabricate the devices on each plane to compare these material properties. There are several studies about power devices fabricated on the c‐plane ; however, there are only few studies about m‐plane power devices . Furthermore, considering the design of practical devices, device fabrication with an epitaxial drift layer is required.…”

Section: Introductionmentioning

confidence: 99%

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Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE

Tanaka

Barry

Nagamatsu

et al. 2017

Phys. Status Solidi A

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In this study, GaN m‐plane Schottky barrier diodes fabricated with a metalorganic vapor‐phase epitaxy on a GaN substrate were investigated using emission microscope, photoluminescence, and cathodoluminescence. In addition, facet dependence of leakage current under reverse‐biased condition was observed. We showed that the leakage‐current distribution was caused by the facet dependence of the carrier concentration and oxygen concentration. These results can provide important suggestions for the fabrication of m‐plane devices. (a) four‐faceted hillocks on m‐plane GaN MOVPE sample, facet dependence of (b) leakage current and (c) PL peak intensity of the m‐plane GaN Schottky barrier diode.

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Section: Resultssupporting

confidence: 85%

“…However, f B (C-V) are different from the values in Ref. [12]. This result indicates that our samples have in-plane distribution of electric characteristics.…”

Section: Resultscontrasting

confidence: 81%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE

Tanaka

Barry

Nagamatsu

et al. 2017

Phys. Status Solidi A

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“…The q ϕ B for the m‐plane (0.76 eV) was found to be 0.16 eV smaller than that for the c‐plane (0.92 eV). These values were close to the reported values . The series resistance R is expressed as R = R epi + R sub + R c , where R epi , R sub , R c , stand for the resistance of the epitaxial layer, substrate, and contact.…”

Section: Resultssupporting

confidence: 89%

Comparison of Electrical Properties of Ni/n‐GaN Schottky Diodes on c‐Plane and m‐Plane GaN Substrates

Yamada

Chonan²,

Takahashi³

et al. 2017

Physica Status Solidi (a)

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The electrical properties of un-doped and lightly Si-doped GaN grown on cand m-plane GaN substrates by metal organic chemical vapor deposition are investigated. The step-flow growth modes are realized for c-and m-plane GaN epitaxial layer. The carbon contamination in the c-plane GaN and mplane GaN, grown at 1120 C and V/III ¼ 1000, are found to be 1.4 Â 10 16 cm À3 and 5.0 Â 10 15 cm À3 , respectively. The m-plane GaN follows a linear correlation between the carrier concentration and the Si atomic concentration. The Ni/n-GaN (Si; 1 Â 10 16 cm À3 ) Schottky vertical diodes on the c-and m-plane GaN substrates reveal that the reverse current-voltage (I-V) curves are fitted by using the thermionic field emission model under the measured carrier concentration and the Schottky barrier height. The leakage current of the m-plane GaN is three orders of magnitude larger than the c-plane GaN, mostly due to the difference in the Schottky barrier height. status solidi physica a Schottky Diodes www.pss-a.com

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“…The first demonstration of a nonpolar electronic device was by Fujiwara et al who showed an enhancement‐mode m‐ plane AlGaN/GaN heterojunction field‐effect transistors (HFETs) on Fe‐doped GaN buffer layers. Naganawa et al also reported the first Schottky barrier diodes (SBDs) on m‐ plane obtained by a cleaved surface from a c‐ plane substrate. However, the background carrier concentration in some nonpolar substrates is very high (>1 × 10 17 cm −3 ) due to high unintentional impurity levels on m‐ plane .…”

Section: Successes and Challengesmentioning

confidence: 99%

A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges

Monavarian

Rashidi

Feezell

2018

Phys. Status Solidi A

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The performance of III-nitride devices is degraded by polarization in a wurtzite crystal structure. Nonpolar and semipolar III-nitrides have been extensively studied since the early 2000s as a solution to the polarizationrelated issues. Removal of polarization is expected to improve the radiative efficiency, optical gain, charge transport, and potentially offer solutions to the challenging problems in III-nitride light-emitting diodes (LEDs) known as efficiency droop and the green gap. In addition, use of nonpolar and semipolar orientations is also predicted to offer polarization pinning in some devices due to anisotropic in-plane strain. Despite the many potential advantages over c-plane, nonpolar and semipolar optoelectronic devices have not successfully replaced conventional c-plane devices in the commercial sector. Here, nonpolar and semipolar III-nitrides are reviewed after more than a decade of development. The successes and challenges of nonpolar and semipolar orientations for applications such as LEDs, laser diodes, superluminescent diodes, and vertical-cavity surface emitting lasers are discussed. New potential avenues for nonpolar and semipolar III-nitrides are also highlighted, including visible-light communication and power electronics. The availability of low-cost, high-crystal-quality substrates with nonpolar or semipolar orientation is discussed and alternative approaches for realizing these orientations are presented, including selective-area bottom-up nanostructures.

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Electrical characteristics of Au/Ni Schottky diodes on cleaved m-plane surfaces of free-standing n-GaN substrates

Cited by 19 publications

References 28 publications

Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE

Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE

Comparison of Electrical Properties of Ni/n‐GaN Schottky Diodes on c‐Plane and m‐Plane GaN Substrates

A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges

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