Electrical Characteristics of Cylindrical Gate-All-Around CGAA Tunnel FETS

Abstract

Recently, the Cylindrical Gate-all-Around CGAA MOSFET is considered as the promising device structure and a vital element for Vertical CMOS technology. However device optimization is still under investigations. In this work, electrical characteristics of Cylindrical GAA (CGAA) MOSFET are systematically analyzed. We evaluated and studied the length dependence of ON current (I ON), and subthreshold leakage current (I OF) with different device parameters, especially channel length (Lg), channel thickness (t Si), oxide thickness (t ox), and gate work function (Φ M), using the finite element, numerical method by solving Poisson's equation in Cylindrical coordinate system.