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In this paper, the magnetic field effect on the carrier transport phenomenon in the double gate metal-oxide-semiconductor field-effect transistor (MOSFET) has been investigated. This is done by exploring the Lorentz force and the behavior of a semiconductor subjected to a constant magnetic field. The magnetic field modulates the electrons position and density as well as the potential distribution in the case of silicon tunnel tunneling field-effects (FETs). This modulation impacts the device electrical characteristics such as ON current (I_ON), subthreshold leakage current (IOF), threshold voltage (V_T), magneto-transconductance (g_mm) and output magneto-conductance (gm_DS). In addition, a hall voltage (V_H) is induced and modulated by the magnetic field. It has been observed that this voltage influences the effective applied gate voltage. It has been observed that the threshold voltage variations induced by the magnetic field is of paramount importance and affects the device switching properties both speed and power dissipation, noted that the threshold voltage VT and (Ion/Iof) ratio are reduced by 10^-3V and 10² for a magnetic field of ±6 and ±5.5 Tesla, respectively. We have simulated the different behavior in the channel, mainly doping concentration, potential distribution, conduction and valence bands, total current density, total charge density, electric field, electron mobility, and electron velocity.

The present paper deals with the analysis approach of multiconductor microstrip systems an integrated circuits using the finite element method (FEM). And we look for the best dimensions of the tracks for minimized the electromagnetic interaction in order to adapt them in microtechnology. Interconnects are multiple strip and multilevel in ICs. Today interconnects are great attention in high speed digital design and microwave integrated circuit application. With increased density of packing, line to line coupling of electromagnetic also becomes prominent. Computation of the matrices of capacitances, inductances per unit length of multiconductor is important since these elements are essential parameters in designing of package.

Recently, the Cylindrical Gate-all-Around CGAA MOSFET is considered as the promising device structure and a vital element for Vertical CMOS technology. However device optimization is still under investigations. In this work, electrical characteristics of Cylindrical GAA (CGAA) MOSFET are systematically analyzed. We evaluated and studied the length dependence of ON current (I ON), and subthreshold leakage current (I OF) with different device parameters, especially channel length (Lg), channel thickness (t Si), oxide thickness (t ox), and gate work function (Φ M), using the finite element, numerical method by solving Poisson's equation in Cylindrical coordinate system.