Investigation on Body Potential in Cylindrical Gate-All-Around MOSFET

Kessi, Mohamed; Benfdila, A.; Lakhelef, A.; Belhimer, Lounas; Djouder, M.

doi:10.1109/miel.2019.8889640

Cited by 4 publications

(2 citation statements)

References 3 publications

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“…where V: denotes the electrostatic potential, ε: is the electrical permittivity of the material, q: is the electronic charge and N=ND-NA is the fully ionized net impurity distribution. The solution of the Poisson in (11) is the electrostatic potential V. The discretization of the Poisson equation, the continuity equations of electrons and holes are necessary and a coupled method, which is a generalization of Newton's method, is used to calculate the initially proposed system by a numerical iterative method. And in order to express the impact of the magnetic field in the device, by solving and rewriting the usual D-D (drift-diffusion) model of carrier's densities taking into account the terms depending on the magnetic field emitted by the effect of the Lorentz force on the carriers.…”

Section: Device Structure and Physicsmentioning

confidence: 99%

Magnetic sensitivity modeling of dual gate MOS transistor

Kessi

Benfdila

2021

IJEECS

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In this paper, the magnetic field effect on the carrier transport phenomenon in the double gate metal-oxide-semiconductor field-effect transistor (MOSFET) has been investigated. This is done by exploring the Lorentz force and the behavior of a semiconductor subjected to a constant magnetic field. The magnetic field modulates the electrons position and density as well as the potential distribution in the case of silicon tunnel tunneling field-effects (FETs). This modulation impacts the device electrical characteristics such as ON current (ION), subthreshold leakage current (IOF), threshold voltage (VT), magneto-transconductance (gmm) and output magneto-conductance (gmDS). In addition, a hall voltage (VH) is induced and modulated by the magnetic field. It has been observed that this voltage influences the effective applied gate voltage. It has been observed that the threshold voltage variations induced by the magnetic field is of paramount importance and affects the device switching properties both speed and power dissipation, noted that the threshold voltage VT and (Ion/Iof) ratio are reduced by 10-3V and 102 for a magnetic field of ±6 and ±5.5 Tesla, respectively. We have simulated the different behavior in the channel, mainly doping concentration, potential distribution, conduction and valence bands, total current density, total charge density, electric field, electron mobility, and electron velocity.

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Section: Device Structure and Physicsmentioning

confidence: 99%

Magnetic sensitivity modeling of dual gate MOS transistor

Kessi

Benfdila

2021

IJEECS

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“…It is well known that miniaturizing conventional metal-oxide-semiconductor field-effect transistor (MOSFETs) at the nanoscale [2] results in a higher magnetic sensitivity with respect to the magnetic field due to the smaller active channel area [3], [4]. It allows a variety of complex short-channel effects (SCE) such as hot carrier effect, threshold voltage, substrate carrier effect, Hall voltage, will occur within linear region with large fluctuations in drain voltage [5], [6]. The effect of the parasitic effect on the external electrical properties of field effect transistors has been reported in the field of MOSFETs [7], [8] microelectronics, and some studies have also studied materials that conduct current [9].…”

Section: Introductionmentioning

confidence: 99%

Modeling of magnetic sensitivity of the metal-oxide-semiconductor field-effect transistor with double gates

Hasan¹,

Mutlaq²,

Ali³

et al. 2023

IJECE

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In this paper, we investigated the effect of magnetic field on the carrier transport phenomenon in metal-oxide-semiconductor field-effect transistor (MOSFET) with double gates by examining the behavior of the semiconductor under the Lorentz force and a constant magnetic field. Various behaviors within the channel have been simulated including the potential distribution, conduction and valence bands, total current density, total charge density and the magnetic field. The results obtained indicate that this modulation affects the electrical characteristics of the device such as on-state current (ION), subthreshold leakage current (IOF), threshold voltage (VTh), and the Hall voltage (VH) is induced by the magnetic field. The change in threshold voltage caused by the magnetic field has been observed to affect the switching characteristics of the device, such as speed and power loss, as well as the threshold voltage VTh and (ION/IOF) ratio. Note that it is reduced by 10-3 V. 102 for magnetic fields of ±6 and ±5.5 tesla respectively.

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Scaling Beyond 7nm Node: An Overview of Gate-All-Around FETs

2021

2021 9th International Symposium on Next Generation Electronics (ISNE)

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Investigation on Body Potential in Cylindrical Gate-All-Around MOSFET

Cited by 4 publications

References 3 publications

Magnetic sensitivity modeling of dual gate MOS transistor

Magnetic sensitivity modeling of dual gate MOS transistor

Modeling of magnetic sensitivity of the metal-oxide-semiconductor field-effect transistor with double gates

Scaling Beyond 7nm Node: An Overview of Gate-All-Around FETs

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