Investigation on cylindrical gate-all-around (GAA) tunnel FETS scaling

Kessi, Mohamed; Benfdila, A.; Lakhlef, Ahcene

doi:10.1109/miel.2017.8190102

Cited by 6 publications

(3 citation statements)

References 12 publications

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“…The gate to source voltage is changing between the 0V to 1V and at the V DS = 1V, the maximum drain current (I D ) is 0.1628 mA and 0.3052 mA for SG-CGAA MOSFET and DG-CGAA MOSFET respectively. In the double gate structure the value of the drain current increases due to both inner gate and outer gate [11][12][13][14][15][16][17]. The channel region is controlled by both the gates, so the drain current enhances, so the on current enhances, and also the off current reduces.…”

Section: Device Structurementioning

confidence: 99%

Design and performance analysis of A Triple Material Double Gate Cylindrical Gate All Around (TMDG CGAA) MOSFET in Nano-meter Regime

Menaria¹,

Pandey²

2020

SKIT Research Journal

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The current work deals with the designing and performance analysis of a Triple Material Double Gate Cylindrical Gate All Around (TMDG-CGAA) MOSFET in the nanometer regime. The proposed structure has combined the gate engineering technique by used a double gate structure and the material engineering techniques by used three different materials in the gate electrode to incorporate the benefits of both the techniques. The proposed structure has been verified by using the ATLAS tool, which is a 3-dimensional tool. A comparative study of SG-CGAA, DG-CGAA, DMDG-CGAA, and TMDG-CGAA has been accomplished by using the same device parameters. The threshold voltage (Vth) is extracted from the transfer characteristic of the above MOSFETs. Along with the threshold voltage extraction the other parameters like DIBL and I on /I off ratio are also calculated. Results disclosed that the TMDG-CGAA MOSFET gives better immunity to the SCEs like DIBL. Also, the ratio of on current is to off current is also high in the TMDG-CGAA MOSFET in comparison to SG CGAA MOSFET and DGDM-CGAA MOSFET structures. In the short channel planar devices, the potential barrier is reducing so that the threshold voltage is also reducing. But in the proposed structure the device shows better performance, it increases gate controllability and reducing the SCEs and increment in the high drain current along with the high packaging density, which is needed in the application of Ultra Large Scale Integration (ULSI).

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Section: Device Structurementioning

confidence: 99%

Design and performance analysis of A Triple Material Double Gate Cylindrical Gate All Around (TMDG CGAA) MOSFET in Nano-meter Regime

Menaria¹,

Pandey²

2020

SKIT Research Journal

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“…It is well known that miniaturizing conventional metal-oxide-semiconductor field-effect transistor (MOSFETs) at the nanoscale [2] results in a higher magnetic sensitivity with respect to the magnetic field due to the smaller active channel area [3], [4]. It allows a variety of complex short-channel effects (SCE) such as hot carrier effect, threshold voltage, substrate carrier effect, Hall voltage, will occur within linear region with large fluctuations in drain voltage [5], [6]. The effect of the parasitic effect on the external electrical properties of field effect transistors has been reported in the field of MOSFETs [7], [8] microelectronics, and some studies have also studied materials that conduct current [9].…”

Section: Introductionmentioning

confidence: 99%

Modeling of magnetic sensitivity of the metal-oxide-semiconductor field-effect transistor with double gates

Hasan¹,

Mutlaq²,

Ali³

et al. 2023

IJECE

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In this paper, we investigated the effect of magnetic field on the carrier transport phenomenon in metal-oxide-semiconductor field-effect transistor (MOSFET) with double gates by examining the behavior of the semiconductor under the Lorentz force and a constant magnetic field. Various behaviors within the channel have been simulated including the potential distribution, conduction and valence bands, total current density, total charge density and the magnetic field. The results obtained indicate that this modulation affects the electrical characteristics of the device such as on-state current (ION), subthreshold leakage current (IOF), threshold voltage (VTh), and the Hall voltage (VH) is induced by the magnetic field. The change in threshold voltage caused by the magnetic field has been observed to affect the switching characteristics of the device, such as speed and power loss, as well as the threshold voltage VTh and (ION/IOF) ratio. Note that it is reduced by 10-3 V. 102 for magnetic fields of ±6 and ±5.5 tesla respectively.

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“…In the field of microelectronics technology reported parasitic effect on the external electrical characteristics in the field effect transistors metal-oxide-semiconductor field-effect transistor (MOSFET) [4]- [7], a few research has also motivated exploring the presence of a magnetic field in the carrier transport phenomena in any substance carrying current, and thus also in the active region of semiconductor devices especially in the technology of complementary metal-oxide-semiconductor (CMOS) field-effect transistor [8], [9]. The downscaling of dimensions of conventional MOSFETs at the nano-scale [10]- [12] is known to have a high magnetic sensitivity to the magnetic field [13], [14] because of the low active channel area. This leads to complicated various short channel effects (SCE) such as the effect of hot carriers effect, threshold voltage Indonesian J Elec Eng & Comp Sci ISSN: 2502-4752  roll-off, substrate carrier effect, higher change in hall voltage and drain-source resistance (RDS) in the linear region [8], [13], [15], [16].…”

Section: Introductionmentioning

confidence: 99%

Magnetic sensitivity modeling of dual gate MOS transistor

Kessi

Benfdila

2021

IJEECS

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In this paper, the magnetic field effect on the carrier transport phenomenon in the double gate metal-oxide-semiconductor field-effect transistor (MOSFET) has been investigated. This is done by exploring the Lorentz force and the behavior of a semiconductor subjected to a constant magnetic field. The magnetic field modulates the electrons position and density as well as the potential distribution in the case of silicon tunnel tunneling field-effects (FETs). This modulation impacts the device electrical characteristics such as ON current (ION), subthreshold leakage current (IOF), threshold voltage (VT), magneto-transconductance (gmm) and output magneto-conductance (gmDS). In addition, a hall voltage (VH) is induced and modulated by the magnetic field. It has been observed that this voltage influences the effective applied gate voltage. It has been observed that the threshold voltage variations induced by the magnetic field is of paramount importance and affects the device switching properties both speed and power dissipation, noted that the threshold voltage VT and (Ion/Iof) ratio are reduced by 10-3V and 102 for a magnetic field of ±6 and ±5.5 Tesla, respectively. We have simulated the different behavior in the channel, mainly doping concentration, potential distribution, conduction and valence bands, total current density, total charge density, electric field, electron mobility, and electron velocity.

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Investigation on cylindrical gate-all-around (GAA) tunnel FETS scaling

Cited by 6 publications

References 12 publications

Design and performance analysis of A Triple Material Double Gate Cylindrical Gate All Around (TMDG CGAA) MOSFET in Nano-meter Regime

Design and performance analysis of A Triple Material Double Gate Cylindrical Gate All Around (TMDG CGAA) MOSFET in Nano-meter Regime

Modeling of magnetic sensitivity of the metal-oxide-semiconductor field-effect transistor with double gates

Magnetic sensitivity modeling of dual gate MOS transistor

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