Electrical Characteristics of Ge-Based Metal-Insulator-Semiconductor Devices with Ge&lt;SUB&gt;3&lt;/SUB&gt;N&lt;SUB&gt;4&lt;/SUB&gt; Dielectrics Formed by Plasma Nitridation

Okamoto, Gaku; Kutsuki, Katsuhiro; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

doi:10.1166/jnn.2011.3900

Cited by 14 publications

(9 citation statements)

References 7 publications

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“…Ge 3 N 4 has been known since 1930, when the hexagonal phenacite structure (ground-state b phase, space group: P6 3 /m) was first synthesized by exposing the germanium powder to the ammonia atmosphere at 973 K [4,5]. Ruddlesden and Popper [6] have found that the a phase (space group: P3 1 /c) is closely related to b-Ge 3 N 4 , but is generally believed to be a metastable phase under ambient conditions [7,8]. g-Ge 3 N 4 has been synthesized from the Ge powders under high temperature-pressure conditions [9] or by shock-wave compression [10].…”

Section: Introductionmentioning

confidence: 99%

Determination of the finite-temperature anisotropic elastic and thermal properties of Ge3N4: A first-principles study

Luo

Cang

Dong

2014

Computational Condensed Matter

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a b s t r a c tTotal energy calculations of germanium nitride, done at three different phases under extreme conditions in the b, wII and g structures using the plane-wave pseudo-potential method plus GGA-PBE in the framework of quantum mechanical density functional theory. Bulk properties such as the equilibrium lattice parameters, elastic constants and bulk moduli are predicted and compared to available theoretical and experimental data. g-Ge 3 N 4 could not resistant to thermal shocks due to its brittleness. The ductility of b-Ge 3 N 4 is larger than that of wII-Ge 3 N 4 . The b / wII / g phase transitions are also successfully predicted.The phase boundary of b / wII transition can be described as P ¼ 10.80087 À 8.58508 Â 10 À4 T þ 5.00991 Â 10 À6 T 2 À 1.84732 Â 10 À9 T 3 . Pressure (0e58 GPa) and temperature (0e1300 K) dependent thermal quantities including the bulk modulus, coefficient of thermal expansion, entropy, heat capacity and Debye temperature are obtained and analyzed through the quasi-harmonic approximation, in which the lattice vibrations and phonon effects are taken into account. Some interesting features can be observed in the temperature range of 300~1200 K. It is worthy of note that most of the investigated properties are not reported by previous literatures. Our calculations need to be verified by the future experiments.

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Section: Introductionmentioning

confidence: 99%

Determination of the finite-temperature anisotropic elastic and thermal properties of Ge3N4: A first-principles study

Luo

Cang

Dong

2014

Computational Condensed Matter

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“…[11][12][13] Moreover, pure germanium nitrides (Ge 3 N 4 ) formed by plasma nitridation have exhibited superior physical properties over GeO 2 , such as higher thermal stability. [14][15][16][17] Although the electrical property of Ge 3 N 4 /Ge metal-insulator-semiconductor (MIS) capacitors can be found in the literature, 18,19) physical characteristics of Ge 3 N 4 /Ge structures need to be further understood for process optimization. Several reports have estimated the chemical shift in Ge 3d core-level photoelectron spectra measured for Ge 3 N 4 surfaces to be about +2.3 eV through conventional X-ray photoelectron spectroscopy (XPS), but without strictly considering the spin-orbit splitting.…”

Section: Introductionmentioning

confidence: 99%

Synchrotron Radiation Photoemission Study of Ge₃N₄/Ge Structures Formed by Plasma Nitridation

Hosoi

Kutsuki

Okamoto

et al. 2011

Jpn. J. Appl. Phys.

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The interactions between buried defects and impurities formed by MeV-level nitrogen ion implantation in silicon have been investigated. The interactions between the oxygen atoms in a CZ Si wafer and the defects introduced during annealing after implantation are discussed in terms of the amount, nature, morphology, and depth distribution of the defects. Oxygen atoms are found to be gettered in two different regions in the implanted layers. A shallow oxygen peak appears in regions near the surface (between 0.5 and 1.5 mm). A deep oxygen peak is also observed at locations with secondary defects, which mainly consist of elongated dislocation loops and dislocation networks. In this case, the gettered oxygen content is not especially influenced by the amount or nature of the generated defects. Rather, there is a good correlation between the gettered oxygen amount and the mismatch stress induced by the atomic radius difference.

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“…These values are in excellent agreement with earlier experimentally reported values for Ge 3 N 4 . 38 No imaginary phonon frequencies were found for any of the considered configurations. The static dielectric constants ( 0 ) presented in this study include the vibrational contribution and hence are in better agreement with the experimental results than previously reported first principles results.…”

Section: A Sigen Materialsmentioning

confidence: 89%

Dielectric properties of Si3− ξ GeξN4 and Si3−ξCξN4: A density functional study

Ulman

Sathiyanarayanan²,

Pandey³

et al. 2013

Journal of Applied Physics

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Articles you may be interested inEvidence for anisotropic dielectric properties of monoclinic hafnia using valence electron energy-loss spectroscopy in high-resolution transmission electron microscopy and ab initio time-dependent density-functional theory Appl.A new class of silicon-carbon clusters: A full study of the hydrogenated Si n C 2 H 2 , n = 3 , 4 , 5 , clusters in comparison with their isoelectronic carboranes C 2 B n H n + 2Using first principles calculations, we have studied the dielectric properties of crystalline aand bphase silicon germanium nitrides and silicon carbon nitrides, A 3Àn B n N 4 (A ¼ Si, B ¼ Ge or C, n ¼ 0; 1; 2; 3). In silicon germanium nitrides, both the high-frequency and static dielectric constants increase monotonically with increasing germanium concentration, providing a straightforward way to tune the dielectric constant of these materials. In the case of silicon carbon nitrides, the high-frequency dielectric constant increases monotonically with increasing carbon concentration, but a more complex trend is observed for the static dielectric constant, which can be understood in terms of competition between changes in the unit-cell volume and the average oscillator strength. The computed static dielectric constants of C 3 N 4 , Si 3 N 4 , and Ge 3 N 4 are 7.13, 7.69, and 9.74, respectively. V C 2013 AIP Publishing LLC. [http://dx.

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Electrical Characteristics of Ge-Based Metal-Insulator-Semiconductor Devices with Ge<SUB>3</SUB>N<SUB>4</SUB> Dielectrics Formed by Plasma Nitridation

Cited by 14 publications

References 7 publications

Determination of the finite-temperature anisotropic elastic and thermal properties of Ge3N4: A first-principles study

Determination of the finite-temperature anisotropic elastic and thermal properties of Ge3N4: A first-principles study

Synchrotron Radiation Photoemission Study of Ge₃N₄/Ge Structures Formed by Plasma Nitridation

Dielectric properties of Si3− ξ GeξN4 and Si3−ξCξN4: A density functional study

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Electrical Characteristics of Ge-Based Metal-Insulator-Semiconductor Devices with Ge<SUB>3</SUB>N<SUB>4</SUB> Dielectrics Formed by Plasma Nitridation

Cited by 14 publications

References 7 publications

Determination of the finite-temperature anisotropic elastic and thermal properties of Ge3N4: A first-principles study

Determination of the finite-temperature anisotropic elastic and thermal properties of Ge3N4: A first-principles study

Synchrotron Radiation Photoemission Study of Ge3N4/Ge Structures Formed by Plasma Nitridation

Dielectric properties of Si3− ξ GeξN4 and Si3−ξCξN4: A density functional study

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Synchrotron Radiation Photoemission Study of Ge₃N₄/Ge Structures Formed by Plasma Nitridation