Electrical characteristics of HfO<sub>2</sub>
 films on InP with different atomic-layer-deposition temperatures

An, Cheol Hyun; Mahata, Chandreswar; Byun, Youngchul; Lee, Myung Soo; Kang, Yu; Cho, Mann Ho; Kim, Hyoungsub

doi:10.1002/pssa.201228759

Cited by 4 publications

(5 citation statements)

References 17 publications

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“…26 Therefore, from the results in this study, a higher D it is expected due to more P-rich oxide formation at higher ALD temperatures. This is consistent with a recent report by An et al, 27 that a significant degradation of electrical performance for HfO 2 /InP stack after ALD at 300 C, compared with that for ALD at 200 and 250 C. In addition, a recent DFT calculation has also suggested that the oxidation of In and P atoms at the (2 Â 4) InP reconstructed surface induces the band gap states. 28 Considering the low growth rate of ALD at 200 C, and the high D it expected from ALD at 300 C, ALD of HfO 2 at 250 C likely the optimum temperature to deposition HfO 2 .…”

Section: Resultssupporting

confidence: 83%

In situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP

Dong

Santosh

Qin

et al. 2013

Journal of Applied Physics

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The dependence of the “self cleaning” effect of the substrate oxides on substrate temperature during atomic layer deposition (ALD) of HfO2 on various chemically treated and native oxide InP (100) substrates is investigated using in situ X-ray photoelectron spectroscopy. The removal of In-oxide is found to be more efficient at higher ALD temperatures. The P oxidation states on native oxide and acid etched samples are seen to change, with the total P-oxide concentration remaining constant, after 10 cycles of ALD HfO2 at different temperatures. An (NH4)2 S treatment is seen to effectively remove native oxides and passivate the InP surfaces independent of substrate temperature studied (200 °C, 250 °C and 300 °C) before and after the ALD process. Density functional theory modeling provides insight into the mechanism of the changes in the P-oxide chemical states.

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Section: Resultssupporting

confidence: 83%

In situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP

Dong

Santosh

Qin

et al. 2013

Journal of Applied Physics

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“…5 shows C total in accumulation as a function of measurement frequency for our experimental results as well as similar results from the literature. 15,[31][32][33][34] The change in total accumulation capacitance from the lowest to highest measurement frequency for our results is largely consistent with those of the literature. We note that while the substrates and dielectrics used for our comparisons are the same, many of the experimental conditions (e.g., oxide thickness, pre-treatments, annealing conditions) are different.…”

Section: Fitting Of Experimental Data Using the Bt And Digs Modelssupporting

confidence: 92%

Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

Galatage

Zhernokletov

Dong

et al. 2014

Journal of Applied Physics

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Articles you may be interested inGate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices Effects of interface states and temperature on the C -V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors Interface states in polymer metal-insulator-semiconductor devices J. Appl. Phys. 98, 073710 (2005); 10.1063/1.2081109Characteristics of an indium antimonide metal-insulator-semiconductor structure prepared by remote plasma enhanced chemical vapor depositionThe origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulatorsemiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8 nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric. V C 2014 AIP Publishing LLC.

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“…A crystalline film can contain crystal defects such as crystal faults. In our previous report, we observed that the presence of crystalline defects induce a leakage current through the film and facilitate the soft break down of the HfO 2 film . However, the PDA film showed improved properties in that the SILC level is even maintained at a high electric field region, as shown in Figure c,d.…”

Section: Resultsmentioning

confidence: 80%

“…In our previous report, we observed that the presence of crystalline defects induce a leakage current through the film and facilitate the soft break down of the HfO 2 film. 38 However, the PDA film showed improved properties in that the SILC level is even maintained at a high electric field region, as shown in Figure 10c,d. Finally, from TEM and SILC results, we conclude that a high-quality crystalline HfO 2 film was induced by the PDA process.…”

Section: Resultsmentioning

confidence: 96%

Structural and Electrical Properties of EOT HfO₂ (<1 nm) Grown on InAs by Atomic Layer Deposition and Its Thermal Stability

Kang

Kim

et al. 2016

ACS Appl. Mater. Interfaces

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We report on changes in the structural, interfacial, and electrical characteristics of sub-1 nm equivalent oxide thickness (EOT) HfO2 grown on InAs by atomic layer deposition. When the HfO2 film was deposited on an InAs substrate at a temperature of 300 °C, the HfO2 was in an amorphous phase with an sharp interface, an EOT of 0.9 nm, and low preexisting interfacial defect states. During post deposition annealing (PDA) at 600 °C, the HfO2 was transformed from an amorphous to a single crystalline orthorhombic phase, which minimizes the interfacial lattice mismatch below 0.8%. Accordingly, the HfO2 dielectric after the PDA had a dielectric constant of ∼24 because of the permittivity of the well-ordered orthorhombic HfO2 structure. Moreover, border traps were reduced by half than the as-grown sample due to a reduction in bulk defects in HfO2 dielectric during the PDA. However, in terms of other electrical properties, the characteristics of the PDA-treated sample were degraded compared to the as-grown sample, with EOT values of 1.0 nm and larger interfacial defect states (Dit) above 1 × 10(14) cm(-2) eV(-1). X-ray photoelectron spectroscopy data indicated that the diffusion of In atoms from the InAs substrate into the HfO2 dielectric during the PDA at 600 °C resulted in the development of substantial midgap states.

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Electrical characteristics of HfO₂ films on InP with different atomic-layer-deposition temperatures

Cited by 4 publications

References 17 publications

In situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP

In situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP

Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

Structural and Electrical Properties of EOT HfO₂ (<1 nm) Grown on InAs by Atomic Layer Deposition and Its Thermal Stability

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Electrical characteristics of HfO2 films on InP with different atomic-layer-deposition temperatures

Cited by 4 publications

References 17 publications

In situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP

In situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP

Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

Structural and Electrical Properties of EOT HfO2 (<1 nm) Grown on InAs by Atomic Layer Deposition and Its Thermal Stability

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Product

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Electrical characteristics of HfO₂ films on InP with different atomic-layer-deposition temperatures

Structural and Electrical Properties of EOT HfO₂ (<1 nm) Grown on InAs by Atomic Layer Deposition and Its Thermal Stability