Electrical characteristics of InAsSb/GaSb heterojunctions

Srivastava, Atul; Zyskind, J.L.; Lum, R. M.; Dutt, B. V.; Klingert, J. K.

doi:10.1063/1.97077

Cited by 42 publications

(22 citation statements)

References 10 publications

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“…From Figure 3(a), it is observed that the device is showing rectifying characteristics, both in the dark (room temperature as well as low Epitaxytemperature) and under ultraviolet radiation, which are consistent with the n-n isotype heterojunctions of other materials as reported by others [81,82,105]. I-V characteristics were obtained on Al/InGaN/Si(111)/Al, Al/InGaN/Al, and Al/Si (111)/Al.…”

Section: Ingan/si Heterostructure-based Uv and Ir Photodetectorssupporting

confidence: 68%

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Heterostructures of III-Nitride Semiconductors for Optical and Electronic Applications

Roul¹,

Chandan²,

Mukundan³

et al. 2018

Epitaxy

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III-Nitride-based heterostructures are well suited for the fabrication of various optoelectronic devices such as light-emitting diodes (LEDs), laser diodes (LDs), high-power/-high-frequency field-effect transistors (FETs), and tandem solar cells because of their inherent properties. However, the heterostructures grown along polar direction are affected by the presence of internal electric field induced by the existence of intrinsic spontaneous and piezoelectric polarizations. The internal electric field is deleterious for optoelectronic devices as it causes a spatial separation of electron and hole wave functions in the quantum wells, which thereby decreases the emission efficiency. The growth of III-nitride heterostructures in nonpolar or semipolar directions is an alternative option to minimize the piezoelectric polarization. The heterostructures grown on these orientations are receiving a lot of focus due to their potential improvement on the efficiency of optoelectronic devices. In the present chapter, the growth of polar and nonpolar III-nitride heterostructures using molecular beam epitaxy (MBE) system and their characterizations are discussed. The transport properties of the III-nitride heterostructure-based Schottky junctions are also included. In addition, their applications toward UV and IR detectors are discussed.

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Section: Ingan/si Heterostructure-based Uv and Ir Photodetectorssupporting

confidence: 68%

“…So far the most extensively studied material systems are ZnO/Si, In x Ga 1-x As, In x Ga 1-x Sb, Ge-Si, etc. [81,82]. Very few groups have reported studies on isotype heterojunctions of In x Ga 1Àx N system [83,84].…”

Section: Heterostructures Of Iii-nitride Semiconductors For Optical Amentioning

confidence: 99%

Heterostructures of III-Nitride Semiconductors for Optical and Electronic Applications

Roul¹,

Chandan²,

Mukundan³

et al. 2018

Epitaxy

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“…However, due to large effective mass of holes than electrons, their mobility is very less and thus a p-p isotype junction is not preferred for high speed electronic applications. So far, the most extensively studied material systems are ZnO/Si, 1,6 In x Ga 1Àx As, In x Ga 1Àx Sb, 7 Ge-Si, 2 etc. Very few groups have reported studies on isotype heterojunctions of In x Ga 1Àx N system.…”

Section: Introductionmentioning

confidence: 99%

Trap modulated photoresponse of InGaN/Si isotype heterojunction at zero-bias

Chandan

Mukundan

Mohan

et al. 2015

Journal of Applied Physics

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n-n isotype heterojunction of InGaN and bare Si (111) was formed by plasma assisted molecular beam epitaxy without nitridation steps or buffer layers. High resolution X-ray diffraction studies were carried out to confirm the formation of epilayers on Si (111). X-ray rocking curves revealed the presence of large number of edge threading dislocations at the interface. Room temperature photoluminescence studies were carried out to confirm the bandgap and the presence of defects. Temperature dependent I-V measurements of Al/InGaN/Si (111)/Al taken in dark confirm the rectifying nature of the device. I-V characteristics under UV illumination, showed modest rectification and was operated at zero bias making it a self-powered device. A band diagram of the heterojunction is proposed to understand the transport mechanism for self-powered functioning of the device.

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“…First, the n-GaSb/n-InAsSb interface is staggered type II, resulting in an electron accumulation layer on the InAsSb side and depletion on the GaSb side. This results in a rectifying junction for low GaSb doping levels as has been previously reported [8]; however, for sufficiently high GaSb doping, it should become Ohmic due to tunneling. Comparison of the homojunction versus heterojunction band alignments in Fig.…”

Section: Resultsmentioning

confidence: 70%