Electrical characteristics of (n)-InP MIS diodes with a interfacial layer deposited at low temperature

Abstract

A new insulator film, PO x N y , has been fabricated using a vapour transport technique for use as an MIS interfacial layer on an n-InP substrate. This layer is obtained directly from phosphorus oxynitride (PON) solid sample. MIS diodes were made with the insulator deposited at 280 • C and have been studied using current-voltage and capacitance-voltage characteristics. The modified thermionic emission (TE) theory can be used to explain the conduction mechanism on the Au-PO x N y -(n)-InP MIS diode. The ideality factor and the barrier height are found to be equal to 2 and 0.67 eV respectively. In the Richardson plot, better linearity was observed when ln(I s /T 2 ) was plotted versus 1/nT than versus 1/T . The mean barrier height χ, and the barrier height at 0 K, qφ B 0 , are found to be equal to 0.24 and 0.59 eV respectively. The relative permittivity ε i of the insulator evaluated at room temperature from high-frequency capacitance measurement is equal to 7.8.

Anisotropic continuum damage model for prediction of failure in flax/polypropylene fabric composites

“…However, due to their nature, these criteria are only applicable within the limits from which their test data is derived. Damage modeling applied to NFCs includes cohesive zone models applied to describe the failure of the interfiber lamella region within flax fiber bundles [21], as well as to describe the failure of the fiber-matrix interface in a hemp/starch composite [22]. To the knowledge of the authors, there have been no studies yet which have utilized a progressive damage approach to model the meso-scale behavior of natural fiber reinforced composites.…”