Electrical characteristics of planar phthalocyanine thin film gas sensors

Wilson, A.; Collins, R. A.

doi:10.1016/0250-6874(87)80058-6

Cited by 65 publications

(16 citation statements)

References 22 publications

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“…Following this interpretation, the above data yield values of d s -50 nm and cPs-I eY. Such values are plausible and support the interpretation, although the value of d s is slightly lower than the values of 96 nm (Wilson and Collins 1987) and 120nm (Hassan and Gould 1990) derived for CuPc.…”

Section: Resultssupporting

confidence: 74%

“…This is a factor of 2·81 times the theoretical Poole-Frenkel value and 5·63 times the theoretical Schottky value, strongly suggesting that interpretations based on either effect taking place across the entire PbPc thickness are unlikely. Both Wilson and Collins (1987) and Hassan and Gould (1990) have explained similar data in copper phthalocyanine films with AI injecting electrodes in terms of a Schottky depletion region of thickness d s, while assuming the theoretical value of Ps in (5). Following this interpretation, the above data yield values of d s -50 nm and cPs-I eY.…”

Section: Resultsmentioning

confidence: 58%

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Observations of Schottky and Poole-Frenkel emission in lead phthalocyanine thin films using aluminium injecting electrodes

Shafai¹,

Gould

1992

International Journal of Electronics

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DC current density-voltage measurements have been performed on vacuum evaporated aluminium-lead phthalocyanine-gold sandwich structures for both electrical polarities. The electrical characteristics differed markedly depending on whether the positive hole-injectingelectrode was gold (forward-bias) or aluminium (reverse-bias). An extensive study of such characteristics revealed two distinct regions in the forward-bias characteristics. In the first of these a power-law dependence of current density (J) on voltage (V) was observed with exponent n-4, and this was identified with space-charge-limited conductivity (SCLC) controlled by an exponential distribution of trap levels of approximate concentration lO 2Sm-3 , in agreement with the authors' earlier work. In the second region a square-law dependence of J on V was observed, which was identified with SCLC controlled by traps of approximate concentration IO'6m-3 and situated at a discrete energy level. Under reverse-bias, current density was considerably lower than for forward-bias and invariably showed a linear dependence oflogJ on VII', but with different slopes in the lower and higher voltage ranges. At lower voltages this behaviour was related to Schottky emission with barrier height t/>s -I eV and width approximately 50nm, while at higher voltages Poole-Frenkel emission was identified. Measurements of capacitance C as a function of applied voltage gave a linear dependence of C -, on V under reverse bias, confirming both the existenceof a Shottky barrier and a barrier height of approximately leV.

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Section: Resultssupporting

confidence: 74%

Section: Resultsmentioning

confidence: 58%

Observations of Schottky and Poole-Frenkel emission in lead phthalocyanine thin films using aluminium injecting electrodes

Shafai¹,

Gould

1992

International Journal of Electronics

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“…These values differ from both the expected Schottky and Pool-Frenkel values. Similar behavior has been reported previously for phthalocyanine films using aluminium-injected electrodes [5,14,15,21] and is interpreted in terms of the Schottky depletion region of thickness W. Putting the theoretical value of b s for FePc into Eq. (9), for oxygen doped samples the values of W = 58.2 nm and / = 1.02 eV and for annealed samples W = 69.7 nm and / = 1.1 eV have been obtained.…”

Section: Discussionsupporting

confidence: 54%

Study on the device characteristics of FePc and FePcCl organic thin film Schottky diodes: Influence of oxygen and post deposition annealing

Rajesh

Menon

2007

Journal of Non-Crystalline Solids

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“…10 Among MPcs, zinc phthalocyanine (ZnPc) is an important organic semiconductor with a high absorption coefficient and good photochemical and thermal stabilities, which make it a suitable material for photovoltaic applications, gas sensors and optoelectronic devices. [11][12][13] The high performance of photovoltaic cells can be achieved by using semiconductors which convert sunlight into electricity, conductive oxides or transparent dielectrics as antireflection coatings. A high refractive index is the most common characteristic of these materials.…”

Section: Introductionmentioning

confidence: 99%

Characterization and Dielectric Properties of Vacuum Deposited Zinc Phthalocyanine Thin Film

KaurManjit¹,

KumarRajesh²,

DograRakesh³

et al. 2017

Surface Innovations

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The present paper reports the structural, optical and electrical properties of zinc phthalocyanine (ZnPc) thin films which were grown by the thermal evaporation technique at different substrate temperatures of 312, 363 and 413 K and dielectric response of sandwich geometry of ZnPc thin films have also been studied within frequency range 1 Hz-50 KHz. The crystal structures of these ZnPc films have been characterized using the X-ray diffraction technique. Raman spectra and photoluminescence have been recorded to study the molecular orientations in the ZnPc films for different substrate temperatures. The absorption spectra of the ZnPc films have shown two absorption bands -namely, the Soret band and Q-band. The activation energy values of these films have been determined to be lying in the range of 0·70-0·75 eV. Hole mobility values of ZnPc films have been calculated by using differential susceptance method. The capacitance and dielectric constant have been found to decrease with increase in frequency.

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Electrical characteristics of planar phthalocyanine thin film gas sensors

Cited by 65 publications

References 22 publications

Observations of Schottky and Poole-Frenkel emission in lead phthalocyanine thin films using aluminium injecting electrodes

Observations of Schottky and Poole-Frenkel emission in lead phthalocyanine thin films using aluminium injecting electrodes

Study on the device characteristics of FePc and FePcCl organic thin film Schottky diodes: Influence of oxygen and post deposition annealing

Characterization and Dielectric Properties of Vacuum Deposited Zinc Phthalocyanine Thin Film

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