Study on the device characteristics of FePc and FePcCl organic thin film Schottky diodes: Influence of oxygen and post deposition annealing

Rajesh, K.; Menon, C. S.

doi:10.1016/j.jnoncrysol.2006.12.016

Cited by 32 publications

(17 citation statements)

References 20 publications

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“…Substituting the voltage-dependent values of n and the other parameters in Eq. (11), the N SS vs. E SS − E V plot was obtained as shown in Fig. 9.…”

Section: Analysis Of Interfacial Properties Of the Au/cuo/p-si Mis Stmentioning

confidence: 99%

“…The electrical parameters of MS structures can be modified by interfacial layer when an interlayer is inserted between the semiconductor and metal. The studies made in literature have shown that the barrier height could be either increased or decreased by using an interlayer on the semiconductor substrate [10][11][12][13][14][15][16][17][18]. The new electrical properties of the MS contacts can be promoted by means of the choice of suitable interlayer [10].…”

Section: Introductionmentioning

confidence: 99%

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Optical and structural properties of CuO nanofilm: Its diode application

Erdoğan

Güllü

2010

Journal of Alloys and Compounds

173

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“…Substituting the voltage-dependent values of n and the other parameters in Eq. (11), the N SS vs. E SS − E V plot was obtained as shown in Fig. 9.…”

Section: Analysis Of Interfacial Properties Of the Au/cuo/p-si Mis Stmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Optical and structural properties of CuO nanofilm: Its diode application

Erdoğan

Güllü

2010

Journal of Alloys and Compounds

173

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“…rectifiers, inverters, freewheeling and polarity protection diodes (Sharma et al, 2004;Rajesh and Menon 2007;Güllü and Türüt, 2010;Karataş et al, 2013). From past to present, there has been increasing attention of these contacts because they have used in optic and electronic (Markyart, 2000;Sze and Kwok, 2007;Tatar et al, 2009;Orak et al, 2014).…”

Section: Introductionmentioning

confidence: 99%

The Electrical Characterization Effect of Insulator Layer between Semiconductor and Metal

Orak¹,

Koçyiğit²

2016

jist

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Metal-Insulator-semiconductor contacts (MIS) have been studied its importance in electronic and optoelectronic. Their importance comes from its so high dielectric constant, storage layer property and effect of capacitance. For this reason, Si 3 N 4 were deposited with PECVD technique on p-type Si about 5 nm thickness layers. The thicknesses of Si 3 N 4 were measured with an elipsometre and obtained MIS contact with Al contact. It was researched the insulator layer effect on the Al/p-Si contact. Its electrical characterizations were inquired by use of the forward and reverse bias I-V, C-V and G-V measurements and were seen that the insulator Si 3 N 4 layer influenced characterizations of the contact. Effect of the interface states (N ss ), the series resistance (R s ) and the other some electrical parameters were investigated by calculating from I-V and C-V measurements. It was observed that from the C-V characterizations at 500 kHz dual, contact behaved similarly memristor structure.Keywords: Al/Si 3 N 4 /p-Si, capacitance behavior, metal-insulator-semiconductor structure, Schottky diode ÖZET: Metal-yalıtkan-yarıiletken (MIS) aygıtlar elektronik ve optoelektronikteki önemlerinden dolayı çalışılmaktadır. Bu önem aygıtların yüksek dielektrik sabitine, depolama tabakası ve kapasitans özelliklerine sahip olmalarından kaynaklanmaktadır. Bu yüzden Si 3 N 4 tabakası p-tipi Si üzerine PECVD tekniği kullanılarak büyütülmüş, kalınlığı elipsometre ile 5 nm olarak ölçülmüştür ve Al kontak sayesinde MIS yapısı elde edilmiştir. Elde edilen Al/p-Si yapısı üzerine Si 3 N 4 tabakasının etkisi araştırılmıştır. Bunun için aygıtın elektrik karakterizasyonları ileri ve ters beslem I-V, C-V ve G-V ölçümleriyle yapılmış ve yalıtkan Si 3 N 4 tabakanın diyot özelliklerini oldukça etkilediği görülmüştür. Ara yüzey halleri (N ss ), seri direnç (R s ) ve diğer bazı elektriksel parametrelerin aygıt üzerine etkileri I-V ve C-V ölçümlerinden hesaplanarak araştırılmıştır. C-V ölçümlerinden aygıtın memristör bir yapı gibi davrandığı tespit edilmiştir.

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“…For example, many devices using polymeric [1][2][3][4][5][6][7] and nonpolymeric organic materials [8][9][10][11][12][13][14][15], including light emitting diodes and devices, such as an inorganic/organic and a metal/organic heterostructures, have been fabricated. Attractive features of these materials offer the possibility for device processing, compatibility with flexible substrates, and low materials consumption for ultra thin molecular films, all of which give the prospect of cheaper photovoltaic energy generation [16]. Large-scale production is easier than in case of inorganic materials.…”

Section: Introductionmentioning

confidence: 99%

“…Large-scale production is easier than in case of inorganic materials. The greatest feature of organic materials is that they can be tuned chemically, in order to adjust separately the band gap, valence and conduction band energies, charge transport as well as the solubility or other structural properties [16]. Owing to their stability and barrier height (BH) enhancement properties, nonpolymeric organic compounds have been * E-mail: omergullu@gmail.com employed particularly in electronic devices [11,[17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Electronic parameters of MIS Schottky diodes with DNA biopolymer interlayer

Güllü

Türüt

2015

Materials Science-Poland

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In this work, we prepared an ideal Cu/DNA/n-InP biopolymer-inorganic Schottky sandwich device formed by coating a nInP semiconductor wafer with a biopolymer DNA. The Cu/DNA/n-InP contact showed a good rectifying behavior. The ideality factor value of 1.08 and the barrier height (Φ b ) value of 0.70 eV for the Cu/DNA/n-InP device were determined from the forward bias I-V characteristics. It was seen that the Φ b value of 0.70 eV obtained for the Cu/DNA/n-InP contact was significantly larger than the value of 0.48 eV of conventional Cu/n-InP Schottky diodes. Modification of the interfacial potential barrier of Cu/n-InP diode was achieved using a thin interlayer of DNA biopolymer. This was attributed to the fact that DNA biopolymer interlayer increased the effective barrier height by influencing the space charge region of InP.

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Study on the device characteristics of FePc and FePcCl organic thin film Schottky diodes: Influence of oxygen and post deposition annealing

Cited by 32 publications

References 20 publications

Optical and structural properties of CuO nanofilm: Its diode application

Optical and structural properties of CuO nanofilm: Its diode application

The Electrical Characterization Effect of Insulator Layer between Semiconductor and Metal

Electronic parameters of MIS Schottky diodes with DNA biopolymer interlayer

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