Electronic parameters of MIS Schottky diodes with DNA biopolymer interlayer

Abstract

In this work, we prepared an ideal Cu/DNA/n-InP biopolymer-inorganic Schottky sandwich device formed by coating a nInP semiconductor wafer with a biopolymer DNA. The Cu/DNA/n-InP contact showed a good rectifying behavior. The ideality factor value of 1.08 and the barrier height (Φ b ) value of 0.70 eV for the Cu/DNA/n-InP device were determined from the forward bias I-V characteristics. It was seen that the Φ b value of 0.70 eV obtained for the Cu/DNA/n-InP contact was significantly larger than the value of 0.48 eV of conventional Cu/n-InP Schottky diodes. Modification of the interfacial potential barrier of Cu/n-InP diode was achieved using a thin interlayer of DNA biopolymer. This was attributed to the fact that DNA biopolymer interlayer increased the effective barrier height by influencing the space charge region of InP.

Effect of substrate type on the parameters of CdSe-TSC Schottky diode

“…The decreases in slope at high voltage could be due to 'trap-filled' limit of the device at high voltage [18]. According to the SBD theory, the relationship between current and voltage is given by [19]…”

Density Functional Theory Calculations of Pinus brutia Derivatives and Its Response to Light in a Au/n-Si Device

“…In our Au/Pinus brutia/n-Si device, the lower ideality factor value is directly linked to the presence of the pine-based dye layer. In the literature [31][32][33], it is possible to find studies in which the ideality factor value both increases and decreases as a result of the integration of the organic-inorganic layer between the metal and semiconductor. In [34,35], the increase in the ideality factor with the presence of organic layers was attributed to the interface mechanisms that contain interface dipoles due to the organic layer as well as the distribution of density of interface states as a result of the fabrication-related defects in the interface.…”

Investigating the electronic properties of shrimp synthetic viral DNAs integrated within Schottky junctions

“…DNA was reported to behave like semiconductors with energy-gap of about 2.3 to 2.4 eV in dry state 5) in agreement with findings from different research groups. [6][7][8][9] DNA-based diodes and Schottky junctions involving various configurations such as Al/DNA/n-InP, 10) Cu/DNA/n-InP, 11) Al/DNA/p-Si, 12) Au/DNA/ITO, 13) and Ag/DNA/p-Si/Al, 14) have been reported for use in different applications. Recently, electronic characterization and profiling of mushroom-derived DNA, 15) algae-derived DNA, 16) and shrimp pathogens-derived DNA 17) Schottky junctions (Al/DNA/ITO/Al) were used to identify different DNA sequences.…”

“…Current curves in the positive region for both junctions flats off around current value of 10 −4 A as a result of effects of series resistance from the contact wires or bulk resistance of the organic (DNA) and inorganic (metal) material. 11) Güllü and Türüt discovered that the magnitude of the curvature in reverse current of a Schottky junction was reduced by more than two orders with non-DNA interlayer structure compared to the Schottky junction with DNA interlayers. 11) This shows that DNA played a role in rectification by modifying the Schottky barrier height (SBH).…”

“…11) Güllü and Türüt discovered that the magnitude of the curvature in reverse current of a Schottky junction was reduced by more than two orders with non-DNA interlayer structure compared to the Schottky junction with DNA interlayers. 11) This shows that DNA played a role in rectification by modifying the Schottky barrier height (SBH). R versus V plot (Fig.…”